TRANSISTOR NPN 60V 3A TO-220F

2SD2012

Manufacturer Part Number2SD2012
DescriptionTRANSISTOR NPN 60V 3A TO-220F
ManufacturerSTMicroelectronics
2SD2012 datasheet
 

Specifications of 2SD2012

Transistor TypeNPNCurrent - Collector (ic) (max)3A
Voltage - Collector Emitter Breakdown (max)60VVce Saturation (max) @ Ib, Ic1V @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce100 @ 500mA, 5VPower - Max25W
Frequency - Transition3MHzMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)Transistor PolarityNPN
Mounting StyleThrough HoleCollector- Emitter Voltage Vceo Max60 V
Emitter- Base Voltage Vebo7 VMaximum Dc Collector Current3 A
Power Dissipation25 WDc Collector/base Gain Hfe Min20
Gain Bandwidth Product Ft3 MHzMaximum Operating Frequency3 MHz
Lead Free Status / RoHS StatusLead free / RoHS CompliantCurrent - Collector Cutoff (max)-
Other names497-5900-5  
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HIGH DC CURRENT GAIN
LOW SATURATION VOLTAGE
INSULATED PACKAGE FOR EASY
MOUNTING
APPLICATIONS
GENERAL PURPOSE POWER AMPLIFIERS
GENERAL PURPOSE SWITCHING
DESCRIPTION
The 2SD2012 is a silicon NPN power transistor
housed in TO-220F insulated package.
It is inteded for power linear and switching
applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
Collector-Base Voltage (I
CBO
V
Collector-Emitter Voltage (I
CEO
V
Emitter-Base Voltage (I
EBO
I
Collector Current
C
I
Collector Peak Current
CM
I
Base Current
B
P
Total Dissipation at T
tot
V
Insulation Withstand Voltage (RMS) from All
isol
Three Leads to Exernal Heatsink
T
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
October 2003
NPN SILICON POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
= 0)
E
= 0)
B
= 0)
C
(t
< 5 ms)
p
o
25
C
c
2SD2012
3
2
1
TO-220F
Value
Unit
60
V
60
V
7
V
3
A
6
A
0.5
A
25
W
1500
V
o
-65 to 150
C
o
150
C
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2SD2012 Summary of contents

  • Page 1

    ... HIGH DC CURRENT GAIN LOW SATURATION VOLTAGE INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS GENERAL PURPOSE POWER AMPLIFIERS GENERAL PURPOSE SWITCHING DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package inteded for power linear and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V ...

  • Page 2

    ... THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Emitter Cut-off Current EBO ( Collector-Emitter (BR)CEO Breakdown Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter Voltage Current Gain FE f Transition frequency T C Collector-Base CBO Capacitance Pulsed: Pulse duration = 300 s, duty cycle ...

  • Page 3

    ... DC Current Gain Base Emitter On Voltage Collector Emitter Saturation Voltage 2SD2012 3/5 ...

  • Page 4

    ... DIM. MIN. A 4.50 B 2.34 D 2.56 E 0. 2. 9.45 L6 15.67 L7 8.99 L8 Dia 3.08 4/5 TO-220F MECHANICAL DATA mm TYP. MAX. 4.90 2.74 2.96 0.50 0.60 0.90 1.47 5.08 2.54 2.74 10.36 15.80 10.05 16.07 9.39 3.30 3.28 inch MIN. TYP. ...

  • Page 5

    ... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES http://www.st.com 2SD2012 5/5 ...