2SD2012 STMicroelectronics, 2SD2012 Datasheet

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... HIGH DC CURRENT GAIN LOW SATURATION VOLTAGE INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS GENERAL PURPOSE POWER AMPLIFIERS GENERAL PURPOSE SWITCHING DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package inteded for power linear and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V ...

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... THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Emitter Cut-off Current EBO ( Collector-Emitter (BR)CEO Breakdown Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter Voltage Current Gain FE f Transition frequency T C Collector-Base CBO Capacitance Pulsed: Pulse duration = 300 s, duty cycle ...

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... DC Current Gain Base Emitter On Voltage Collector Emitter Saturation Voltage 2SD2012 3/5 ...

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... DIM. MIN. A 4.50 B 2.34 D 2.56 E 0. 2. 9.45 L6 15.67 L7 8.99 L8 Dia 3.08 4/5 TO-220F MECHANICAL DATA mm TYP. MAX. 4.90 2.74 2.96 0.50 0.60 0.90 1.47 5.08 2.54 2.74 10.36 15.80 10.05 16.07 9.39 3.30 3.28 inch MIN. TYP. ...

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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES http://www.st.com 2SD2012 5/5 ...