2SD2012 STMicroelectronics, 2SD2012 Datasheet - Page 3
2SD2012
Manufacturer Part Number
2SD2012
Description
TRANSISTOR NPN 60V 3A TO-220F
Manufacturer
STMicroelectronics
Datasheet
1.2SD2012.pdf
(5 pages)
Specifications of 2SD2012
Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1V @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 500mA, 5V
Power - Max
25W
Frequency - Transition
3MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
3 A
Power Dissipation
25 W
Dc Collector/base Gain Hfe Min
20
Gain Bandwidth Product Ft
3 MHz
Maximum Operating Frequency
3 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-5900-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SD2012
Manufacturer:
TOS
Quantity:
20 000
Part Number:
2SD2012
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
2SD2012
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter On Voltage
3/5