BD435 STMicroelectronics, BD435 Datasheet

TRANS NPN EPITAX 4A 32V SOT-32

BD435

Manufacturer Part Number
BD435
Description
TRANS NPN EPITAX 4A 32V SOT-32
Manufacturer
STMicroelectronics
Datasheets

Specifications of BD435

Transistor Type
NPN
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
500mV @ 200mA, 2A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 10mA, 5V
Power - Max
36W
Frequency - Transition
3MHz
Mounting Type
Through Hole
Package / Case
TO-126-3
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
32V
Power Dissipation Pd
36W
Dc Collector Current
4A
Dc Current Gain Hfe
140
Transistor Case Style
TO-126
No. Of Pins
3
Svhc
No SVHC
Rohs Compliant
Yes
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
32 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
4 A
Power Dissipation
36 W
Continuous Collector Current
4 A
Dc Collector/base Gain Hfe Min
40
Maximum Operating Frequency
3 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7169-5
STBD435
STBD435

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BD435
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BD435
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ST
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BD435
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ST
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ST
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Part Number:
BD435/BD436
Manufacturer:
ST
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ST
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DESCRIPTION
The BD433, BD435, and BD437 are silicon
epitaxial-base NPN power transistors in Jedec
SOT-32 plastic package, intented for use in
medium power linear and switching applications.
The BD433 is especially suitable for use in
car-radio output stages.
The complementary PNP types are BD434,
BD436, and BD438 respectively.
ABSOLUTE MAXIMUM RATINGS
February 2003
For PNP types voltage and current values are negative.
Symbol
STMicroelectronics PREFERRED
SALESTYPE
COMPLEMENTARY PNP - NPN DEVICES
V
V
V
V
T
P
I
CBO
CES
CEO
EBO
I
CM
I
T
stg
C
B
tot
j
COMPLEMENTARY SILICON POWER TRANSISTORS
Collector-Base Voltage (I
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
c
C
25
E
= 0)
= 0)
B
10 ms)
o
BE
C
= 0)
= 0)
NPN
PNP
INTERNAL SCHEMATIC DIAGRAM
BD433
BD434
22
22
22
-65 to 150
BD435
BD436
Value
150
SOT-32
32
32
32
36
5
4
7
1
BD433/5/7
BD434/6/8
3
BD437
BD438
2
45
45
45
1
Unit
o
o
W
V
V
V
V
A
A
A
C
C
1/4

Related parts for BD435

BD435 Summary of contents

Page 1

... COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in car-radio output stages ...

Page 2

... BD433 BD434 BD435 BD436 BD437 BD438 THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Collector Cut-off CES Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter Voltage ...

Page 3

... MIN. TYP. A 7.4 B 10.5 b 0.7 b1 0.40 C 2.4 c1 1 2. BD433 BD434 BD435 BD436 BD437 BD438 mm MAX. MIN. 7.8 0.291 10.8 0.413 0.9 0.028 0.65 0.015 2.7 0.094 1.3 0.039 16.0 0.606 2.2 4.4 3.8 3.2 0.118 2.54 0 inch TYP. ...

Page 4

... BD433 BD434 BD435 BD436 BD437 BD438 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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