TRANS NPN EPITAX 4A 32V SOT-32

BD435

Manufacturer Part NumberBD435
DescriptionTRANS NPN EPITAX 4A 32V SOT-32
ManufacturerSTMicroelectronics
BD435 datasheets
 


Specifications of BD435

Transistor TypeNPNCurrent - Collector (ic) (max)4A
Voltage - Collector Emitter Breakdown (max)32VVce Saturation (max) @ Ib, Ic500mV @ 200mA, 2A
Current - Collector Cutoff (max)100µADc Current Gain (hfe) (min) @ Ic, Vce40 @ 10mA, 5V
Power - Max36WFrequency - Transition3MHz
Mounting TypeThrough HolePackage / CaseTO-126-3
Transistor PolarityNPNCollector Emitter Voltage V(br)ceo32V
Power Dissipation Pd36WDc Collector Current4A
Dc Current Gain Hfe140Transistor Case StyleTO-126
No. Of Pins3SvhcNo SVHC
Rohs CompliantYesMounting StyleSMD/SMT
Collector- Emitter Voltage Vceo Max32 VEmitter- Base Voltage Vebo5 V
Maximum Dc Collector Current4 APower Dissipation36 W
Continuous Collector Current4 ADc Collector/base Gain Hfe Min40
Maximum Operating Frequency3 MHzLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names497-7169-5
STBD435
STBD435
  
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COMPLEMENTARY SILICON POWER TRANSISTORS
STMicroelectronics PREFERRED
SALESTYPE
COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The BD433, BD435, and BD437 are silicon
epitaxial-base NPN power transistors in Jedec
SOT-32 plastic package, intented for use in
medium power linear and switching applications.
The BD433 is especially suitable for use in
car-radio output stages.
The complementary PNP types are BD434,
BD436, and BD438 respectively.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
Collector-Base Voltage (I
CBO
V
Collector-Emitter Voltage (V
CES
V
Collector-Emitter Voltage (I
CEO
V
Emitter-Base Voltage (I
EBO
I
Collector Current
C
I
Collector Peak Current (t
CM
I
Base Current
B
P
Total Dissipation at T
tot
T
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
For PNP types voltage and current values are negative.
February 2003
INTERNAL SCHEMATIC DIAGRAM
NPN
BD433
PNP
BD434
= 0)
E
= 0)
BE
= 0)
B
= 0)
C
10 ms)
o
25
C
c
BD433/5/7
BD434/6/8
1
2
3
SOT-32
Value
BD435
BD437
BD436
BD438
22
32
45
22
32
45
22
32
45
5
4
7
1
36
-65 to 150
150
Unit
V
V
V
V
A
A
A
W
o
C
o
C
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BD435 Summary of contents

  • Page 1

    ... COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in car-radio output stages ...

  • Page 2

    ... BD433 BD434 BD435 BD436 BD437 BD438 THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Collector Cut-off CES Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter Voltage ...

  • Page 3

    ... MIN. TYP. A 7.4 B 10.5 b 0.7 b1 0.40 C 2.4 c1 1 2. BD433 BD434 BD435 BD436 BD437 BD438 mm MAX. MIN. 7.8 0.291 10.8 0.413 0.9 0.028 0.65 0.015 2.7 0.094 1.3 0.039 16.0 0.606 2.2 4.4 3.8 3.2 0.118 2.54 0 inch TYP. ...

  • Page 4

    ... BD433 BD434 BD435 BD436 BD437 BD438 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...