TRANSISTOR NPN 60V 10A TO-220

MJE3055T

Manufacturer Part NumberMJE3055T
DescriptionTRANSISTOR NPN 60V 10A TO-220
ManufacturerSTMicroelectronics
MJE3055T datasheet
 

Specifications of MJE3055T

Transistor TypeNPNCurrent - Collector (ic) (max)10A
Voltage - Collector Emitter Breakdown (max)60VVce Saturation (max) @ Ib, Ic8V @ 3.3A, 10A
Current - Collector Cutoff (max)700µADc Current Gain (hfe) (min) @ Ic, Vce20 @ 4A, 4V
Power - Max75WFrequency - Transition2MHz
Mounting TypeThrough HolePackage / CaseTO-220-3 (Straight Leads)
Transistor PolarityNPNNumber Of Elements1
Collector-emitter Voltage60VCollector-base Voltage(max)70V
Emitter-base Voltage (max)5VCollector Current (dc) (max)10A
Dc Current Gain (min)20Power Dissipation75W
Frequency (max)2MHzOperating Temp Range-55C to 150C
Operating Temperature ClassificationMilitaryMountingThrough Hole
Pin Count3 +TabPackage TypeTO-220
Mounting StyleThrough HoleCollector- Emitter Voltage Vceo Max60 V
Emitter- Base Voltage Vebo5 VMaximum Dc Collector Current10 A
Continuous Collector Current10 ADc Collector/base Gain Hfe Min20
Maximum Operating Frequency2 MHzLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names497-2573-5  
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COMPLEMENTARY SILICON POWER TRANSISTORS
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The MJE3055T is a silicon Epitaxial-Base NPN
transistor in Jedec TO-220 package. It is
intended
for
power switching
general-purpose amplifiers. The complementary
PNP type is MJE2955T.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
Collector-Emitter Voltage (I
CEO
V
Collector-Base Voltage (I
CBO
V
Emitter-Base Voltage (I
EBO
I
Collector Current
C
I
Base Current
B
P
Total Power Dissipation at T
tot
T
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
For PNP types voltage and current values are negative.
September 2003
circuits
and
INTERNAL SCHEMATIC DIAGRAM
NPN
PNP
= 0)
B
= 0)
E
= 0)
C
o
25
C
case
MJE2955T
MJE3055T
3
2
1
TO-220
Value
Unit
MJE3055T
MJE2955T
60
V
70
V
5
V
10
A
6
A
75
W
o
-55 to 150
C
o
150
C
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MJE3055T Summary of contents

  • Page 1

    ... COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package intended for power switching general-purpose amplifiers. The complementary PNP type is MJE2955T. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Collector-Emitter Voltage (I ...

  • Page 2

    ... MJE2955T / MJE3055T THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CEO Current ( Collector Cut-off CEX Current (V = 1.5V Collector Cut-off CBO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Sustaining Voltage V Base-Emitter on BE(on) Voltage h DC Current Gain ...

  • Page 3

    ... F2 1.14 G 4.95 G1 2.40 H2 10.00 L2 16.40 L4 13.00 L5 2.65 L6 15.25 L7 6.20 L9 3.50 M 2.60 DIA. 3.75 MJE2955T / MJE3055T inch MAX. MIN. TYP. 4.60 0.173 1.32 0.048 2.72 0.094 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 0.194 2.70 0.094 10.40 0.394 0.645 14 ...

  • Page 4

    ... MJE2955T / MJE3055T Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...