BUL903ED STMicroelectronics, BUL903ED Datasheet

TRANSISTOR POWER NPN TO-220

BUL903ED

Manufacturer Part Number
BUL903ED
Description
TRANSISTOR POWER NPN TO-220
Manufacturer
STMicroelectronics
Datasheet

Specifications of BUL903ED

Transistor Type
NPN
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
1V @ 150mA, 1A
Current - Collector Cutoff (max)
1mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 500mA, 3V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
497-6683-5
BUL903ED
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APPLICATIONS
DESCRIPTION
The BUL903ED is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
The device has been designed to operate without
baker clamp and transil protection. This enables
saving from 2 up to 10 components in the
application.
ABSOLUTE MAXIMUM RATINGS
February 2001
Symbol
INTEGRATED ANTISATURATION AND
PROTECTION NETWORK
INTEGRATED ANTIPARALLEL COLLECTOR
EMITTER DIODE
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
ARCING TEST SELF PROTECTED
LAMP ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING USING 277V
HALF BRIDGE CURRENT-FED
CONFIGURATION
V
V
V
T
P
I
I
CES
CEO
EBO
I
CM
I
BM
T
stg
C
B
tot
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at Tc = 25
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
p
<5 ms)
p
<5 ms)
BE
o
C
HIGH VOLTAGE FAST-SWITCHING
= 0)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
900
400
150
70
TO-220
7
5
8
2
4
BUL903ED
1
2
3
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/6

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BUL903ED Summary of contents

Page 1

... FLUORESCENT LIGHTING USING 277V HALF BRIDGE CURRENT-FED CONFIGURATION DESCRIPTION The BUL903ED is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The device has been designed to operate without baker clamp and transil protection. This enables saving from components in the application ...

Page 2

... BUL903ED THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Base-Emitter Leakage EBO Current V Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain FE V Parallel Diode Forward ...

Page 3

... Safe Operating Areas DC Current Gain Collector Emitter Saturation Voltage Derating Curve DC Current Gain Base Emitter Saturation Voltage BUL903ED 3/6 ...

Page 4

... BUL903ED Reverse Biased SOA Resistive Load Switching Test Circuit Energy Rating Test Circuit 4/6 ...

Page 5

... BUL903ED inch MIN. TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 ...

Page 6

... BUL903ED Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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