TRANSISTOR POWER NPN TO-220

BUL903ED

Manufacturer Part NumberBUL903ED
DescriptionTRANSISTOR POWER NPN TO-220
ManufacturerSTMicroelectronics
BUL903ED datasheet
 


Specifications of BUL903ED

Transistor TypeNPNCurrent - Collector (ic) (max)5A
Voltage - Collector Emitter Breakdown (max)400VVce Saturation (max) @ Ib, Ic1V @ 150mA, 1A
Current - Collector Cutoff (max)1mADc Current Gain (hfe) (min) @ Ic, Vce20 @ 500mA, 3V
Power - Max70WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Lead Free Status / RoHS StatusLead free / RoHS Compliant
Frequency - Transition-Other names497-6683-5
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INTEGRATED ANTISATURATION AND
PROTECTION NETWORK
INTEGRATED ANTIPARALLEL COLLECTOR
EMITTER DIODE
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
ARCING TEST SELF PROTECTED
APPLICATIONS
LAMP ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING USING 277V
HALF BRIDGE CURRENT-FED
CONFIGURATION
DESCRIPTION
The BUL903ED is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
The device has been designed to operate without
baker clamp and transil protection. This enables
saving from 2 up to 10 components in the
application.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
Collector-Emitter Voltage (V
CES
V
Collector-Emitter Voltage (IB = 0)
CEO
V
Emitter-Base Voltage (IC = 0)
EBO
I
Collector Current
C
I
Collector Peak Current (t
CM
I
Base Current
B
I
Base Peak Current (t
BM
P
Total Dissipation at Tc = 25
tot
T
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
February 2001
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
= 0)
BE
<5 ms)
p
<5 ms)
p
o
C
BUL903ED
3
2
1
TO-220
Value
Unit
900
V
400
V
7
V
5
A
8
A
2
A
4
A
70
W
o
-65 to 150
C
o
150
C
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BUL903ED Summary of contents

  • Page 1

    ... FLUORESCENT LIGHTING USING 277V HALF BRIDGE CURRENT-FED CONFIGURATION DESCRIPTION The BUL903ED is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The device has been designed to operate without baker clamp and transil protection. This enables saving from components in the application ...

  • Page 2

    ... BUL903ED THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Base-Emitter Leakage EBO Current V Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain FE V Parallel Diode Forward ...

  • Page 3

    ... Safe Operating Areas DC Current Gain Collector Emitter Saturation Voltage Derating Curve DC Current Gain Base Emitter Saturation Voltage BUL903ED 3/6 ...

  • Page 4

    ... BUL903ED Reverse Biased SOA Resistive Load Switching Test Circuit Energy Rating Test Circuit 4/6 ...

  • Page 5

    ... BUL903ED inch MIN. TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 ...

  • Page 6

    ... BUL903ED Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...