BUL416T STMicroelectronics, BUL416T Datasheet - Page 2

TRANSISTOR NPN 800V TO-220

BUL416T

Manufacturer Part Number
BUL416T
Description
TRANSISTOR NPN 800V TO-220
Manufacturer
STMicroelectronics
Datasheets

Specifications of BUL416T

Transistor Type
NPN
Current - Collector (ic) (max)
6A
Voltage - Collector Emitter Breakdown (max)
800V
Vce Saturation (max) @ Ib, Ic
1.5V @ 1.33A, 4A
Current - Collector Cutoff (max)
250µA
Dc Current Gain (hfe) (min) @ Ic, Vce
18 @ 700mA, 5V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
800 V
Emitter- Base Voltage Vebo
9 V
Maximum Dc Collector Current
9 A
Power Dissipation
110 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
6 A
Dc Collector/base Gain Hfe Min
18
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-10558-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUL416T
Manufacturer:
ST
Quantity:
20 000
Part Number:
BUL416T BUL416
Manufacturer:
ST
0
Electrical ratings
1
2/9
Electrical ratings
Table 2.
Table 3.
Symbol
Symbol
V
V
V
T
R
R
P
I
I
CEO
CES
EBO
CM
STG
T
I
I
BM
TOT
thJC
thJA
C
B
J
Collector-emitter voltage (V
Collector-emitter voltage (I
Emitter-base voltage (I
Collector current
Collector peak current (t
Base current
Base peak current (t
Total dissipation at T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Absolute maximum ratings
Thermal data
Doc ID 16097 Rev 2
P
c
≤ 25 °C
< 5 ms)
C
Parameter
Parameter
P
= 0)
< 5 ms)
B
BE
= 0)
= 0)
- 65 to 150
Value
Value
1.14
62.5
1600
800
110
150
9
6
9
5
8
BUL416T
°C/W
°C/W
Unit
Unit
°C
°C
W
V
V
V
A
A
A
A

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