MJ802 STMicroelectronics, MJ802 Datasheet
MJ802
Specifications of MJ802
MJ802ST
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MJ802 Summary of contents
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... STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The MJ802 is a silicon Epitaxial-Base power transistor mounted in Jedec TO-3 metal case intended for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Collector-emitter Voltage (I CEO V Collector-base Voltage (I CBO V Emitter-Base Voltage (I EBO I Collector Current ...
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... MJ802 THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-emitter CER(sus) Sustaining Voltage (R = 100 ) BE V Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage V Base-Emitter Voltage Current Gain ...
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... TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30. inch MIN. TYP. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 P003F MJ802 MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 3/4 ...
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... MJ802 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...