BC847BTT1G ON Semiconductor, BC847BTT1G Datasheet

TRANS NPN LP 100MA 45V SC75-3

BC847BTT1G

Manufacturer Part Number
BC847BTT1G
Description
TRANS NPN LP 100MA 45V SC75-3
Manufacturer
ON Semiconductor
Datasheet
1.BC847BTT1G.pdf (6 pages)

Specifications of BC847BTT1G

Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
225mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
0.2 W
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BC847BTT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BC847BTT1G
Manufacturer:
ON Semiconductor
Quantity:
52 871
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BC847BTT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BC847BTT1G
Manufacturer:
ON/安森美
Quantity:
20 000
BC847ATT1, BC847BTT1,
BC847CTT1
General Purpose
Transistors
NPN Silicon
applications. They are housed in the SC−75/SOT−416 package which
is designed for low power surface mount applications.
Features
1. FR−4 @ min pad.
2. FR−4 @ 1.0
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
June, 2004 − Rev. 1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation,
Thermal Resistance,
Total Device Dissipation,
Thermal Resistance,
Junction and Storage
These transistors are designed for general purpose amplifier
Pb−Free Packages are Available*
Semiconductor Components Industries, LLC, 2004
FR−4 Board (Note 1)
T
Derated above 25 C
Junction−to−Ambient (Note 1)
FR−4 Board (Note 2)
T
Derated above 25 C
Junction−to−Ambient (Note 2)
Temperature Range
A
A
= 25 C
= 25 C
Characteristic
1.0 in pad.
Rating
(T
A
= 25 C)
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
EBO
, T
I
qJA
qJA
C
D
D
stg
−55 to
+150
Max
Max
100
200
600
300
400
6.0
1.6
2.4
45
50
1
mW/ C
mW/ C
mAdc
Unit
Unit
mW
mW
C/W
C/W
V
V
V
C
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
3
MARKING DIAGRAM
1
BASE
http://onsemi.com
1
xx = Device Code
M = Date Code
2
COLLECTOR
EMITTER
xxM
SC−75/SOT−41
Publication Order Number:
3
2
CASE 463
STYLE 1
6
BC847ATT1/D

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BC847BTT1G Summary of contents

Page 1

... Temperature Range 1. FR−4 @ min pad. 2. FR−4 @ 1.0 1.0 in pad. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2004 June, 2004 − Rev. 1 Symbol ...

Page 2

BC847ATT1, BC847BTT1, BC847CTT1 ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage ( mA) C Collector −Emitter Breakdown Voltage = 10 mA Collector −Base Breakdown Voltage = 10 mA Emitter ...

Page 3

BC847ATT1, BC847BTT1, BC847CTT1 2.0 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.2 0.5 1.0 2.0 5 COLLECTOR CURRENT (mAdc) C Figure 1. Normalized DC Current Gain 2 1.6 1 ...

Page 4

BC847ATT1, BC847BTT1, BC847CTT1 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 Figure 5. Normalized Thermal Response 10 7 2.0 1.0 0.4 0.6 0.8 1.0 2.0 ...

Page 5

... BC847ATT1, BC847BTT1, BC847CTT1 ORDERING INFORMATION Device BC847ATT1 BC847BTT1 BC847BTT1G BC847CTT1 BC847CTT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi- cations Brochure, BRD8011/D. Marking Package 1E SC−75/SOT−416 1F SC−75/SOT−416 1F SC− ...

Page 6

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

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