PBSS4160T,215 NXP Semiconductors, PBSS4160T,215 Datasheet
PBSS4160T,215
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934057667215
PBSS4160T T/R
PBSS4160T T/R
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PBSS4160T,215 Summary of contents
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DATA SHEET dbook, halfpage PBSS4160T NPN low V Product data sheet Supersedes data of 2003 Jun 24 DISCRETE SEMICONDUCTORS M3D088 (BISS) transistor CEsat 2004 May 12 ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat FEATURES • Low collector-emitter saturation voltage V • High collector current capability I • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I base current (DC peak base current BM P total power dissipation ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to th(j-a) ambient Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and Operated under pulsed conditions: duty cycle δ ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I collector-emitter cut-off current CES I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation voltage I CEsat V base-emitter saturation voltage BEsat R equivalent on-resistance ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat 1 handbook, halfpage V CEsat (V) −1 10 (1) (2) −2 10 (3) −3 10 − 10 100 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.6 Collector-emitter saturation voltage as a function of collector current; typical values. 1 handbook, halfpage V CEsat (V) −1 10 − ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat 2 (6) (5) (4) (3) handbook, halfpage I C (A) 1.6 1.2 0.8 0 °C. T amb ( mA mA mA mA Fig.10 Collector current as a function of collector-emitter voltage; typical values. 2004 May 12 MLE131 (2) (1) handbook, halfpage (7) (8) (9) (10 (V) ( mA. B (10 mA. ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 May scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2 ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...