2SC1741ASTPQ Rohm Semiconductor, 2SC1741ASTPQ Datasheet
2SC1741ASTPQ
Manufacturer Part Number
2SC1741ASTPQ
Description
TRANS NPN 50V 0.5A SPT
Manufacturer
Rohm Semiconductor
Specifications of 2SC1741ASTPQ
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
400mV @ 15mA, 150mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 100mA, 3V
Power - Max
300mW
Frequency - Transition
250MHz
Mounting Type
Through Hole
Package / Case
SC-72-3, SPT
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
32 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
0.3 W
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Gain Bandwidth Product Ft
250 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SC1741ASTPQ
2SC1741ASTPQTB
2SC1741ASTPQTB
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SC1741ASTPQ
Manufacturer:
ROHM
Quantity:
15 000
Transistors
Medium Power Transistor (50V,0.5A)
2SC1741AS
1) High current.(I
2) Low saturation voltage, typically V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Emitter cutoff current
DC current rransfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Basic ordering unit (pleces)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Packaging specifications and h
Absolute maximum rationgs (Ta=25 C)
Electrical characteristics (Ta=25 C)
Features
Package
Parameter
Marking
Code
Type
h
Parameter
FE
C
=5A)
2SC1741AS
5000
Symbol
SPT
QR
TP
Tstg
-
V
V
V
P
Tj
I
CBO
CEO
EBO
C
C
FE
Symbol
CE(sat)
BV
BV
BV
V
Cob
I
I
h
CE(sat)
CBO
EBO
f
FE
T
CBO
CEO
EBO
-55 to +150
=0.1V at I
Limits
150
0.5
0.3
50
50
5
Min.
120
50
50
-
-
-
-
-
5
C
/ I
B
=150mA / 15mA.
Typ.
250
6.5
-
-
-
-
-
-
-
Unit
W
V
V
V
A
C
C
Max.
390
0.5
0.5
0.4
-
-
-
-
-
MHz
Unit
pF
-
V
V
V
V
A
A
I
I
I
V
V
V
V
V
I
C
C
E
C
CB
EB
CE
CE
CB
=
=
=
/I
B
=
100 A
1mA
100 A
=
/I
=
=
=
C
4V
30V
5V , I
10V , I
=
150mA/15mA
3V/0.1A
E
=
E
=
-20mA , f
0A , f
Conditions
2SC1741AS
=
1MHz
=
100MHz
1/2
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2SC1741ASTPQ Summary of contents
Page 1
Transistors Medium Power Transistor (50V,0.5A) 2SC1741AS Features 1) High current.(I =5A Low saturation voltage, typically V Packaging specifications and h Type 2SC1741AS Package SPT Marking - Code TP Basic ordering unit (pleces) 5000 Absolute maximum ...
Page 2
Transistors Electrical characteristic curves 200 V =6V CE 100 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 BASE TO VOLTAGE : V (V) BE Fig.1 Ground emitter propagation characteristics 1000 V =10V CE ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...