MPS2222G ON Semiconductor, MPS2222G Datasheet - Page 4

• Manufacturer Part Number: MPS2222G
• Description: TRANS NPN GP SS 30V TO92
• Manufacturer: ON Semiconductor
• Type: General Purposer

Specifications of MPS2222G

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 625mW
• Frequency - Transition: 250MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Current, Collector: 600 mA
• Current, Gain: 30
• Frequency: 250 MHz
• Package Type: TO-92
• Polarity: NPN
• Power Dissipation: 1.5 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Voltage, Breakdown, Collector To Emitter: 30 V
• Voltage, Collector To Base: 60 V
• Voltage, Collector To Emitter: 30 V
• Voltage, Collector To Emitter, Saturation: 1.6 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: MPS2222GOS

200
100
7.0
5.0
3.0
2.0
8.0
4.0
2.0
6.0
70
50
30
20
10
10
1.0
0.8
0.6
0.4
0.2
0
0.01 0.02 0.05
0.005
0
5.0 7.0
10
0.01
I
C
= 1.0 mA
Figure 7. Frequency Effects
I
500 mA, R
100 mA, R
50 mA, R
0.1
C
Figure 5. Turn −On Time
= 1.0 mA, R
I
C
20
, COLLECTOR CURRENT (mA)
0.2
0.02 0.03
f, FREQUENCY (kHz)
S
30
S
S
= 4.0 kW
= 200 W
= 2.0 kW
0.5
S
= 150 W
50
1.0 2.0
0.05
t
t
t
r
d
d
70
@ V
@ V
@ V
CC
EB(off)
EB(off)
100
10 mA
5.0 10
= 30 V
Figure 4. Collector Saturation Region
R
R
R
S
S
S
0.1
= 2.0 V
= 0
= OPTIMUM
=
=
SOURCE
RESISTANCE
200
MPS2222, MPS2222A
20
I
T
C
J
/I
300
0.2
I
http://onsemi.com
= 25°C
B
B
, BASE CURRENT (mA)
= 10
50
0.3
500
100
4
0.5
500
300
200
100
7.0
5.0
8.0
4.0
2.0
6.0
70
50
30
20
10
10
0
50
5.0 7.0
1.0
100 200
Figure 8. Source Resistance Effects
10
150 mA
f = 1.0 kHz
2.0
t′
I
100 mA
500 mA
1.0 mA
s
C
R
= t
Figure 6. Turn −Off Time
S
I
= 50 mA
C
500 1.0 k 2.0 k
, SOURCE RESISTANCE (OHMS)
20
s
, COLLECTOR CURRENT (mA)
t
3.0
− 1/8 t
f
30
f
5.0
50
70
5.0 k 10 k 20 k
10
100
500 mA
20
200 300
T
V
I
I
T
C
B1
J
CC
J
/I
= 25°C
= 25°C
30
B
= I
= 30 V
50 k 100 k
= 10
B2
50
500