2SC2411KT146R Rohm Semiconductor, 2SC2411KT146R Datasheet
Home Discrete Semiconductor Products Transistors (BJT) - Single 2SC2411KT146R
Manufacturer Part Number
2SC2411KT146R
Description
TRANS NPN 32V 0.5A SOT-346
Manufacturer
Rohm Semiconductor
Specifications of 2SC2411KT146R
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
600mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 100mA, 3V
Power - Max
200mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
32 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
0.2 W
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Gain Bandwidth Product Ft
250 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SC2411KT146R
Available stocks
Part Number:
2SC2411KT146R
Part Number:
2SC2411KT146R
Part Number:
2SC2411KT146R
Part Number:
2SC2411KT146R
Part Number:
2SC2411KT146R
Transistors
Medium Power Transistor (32V, 0.5A)
2SC2411K
1) High I
2) Low V
3) Complements the 2SA1036K.
Epitaxial planar type
NPN silicon transistor
*
Features
Structure
Absolute maximum ratings (Ta = 25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
P
I
Optimal for low voltage operation.
CMax
C
must not be exceeded.
. = 0.5A
CMax
CE(sat)
Parameter
.
.
Symbol
V
V
V
Tstg
P
CBO
CEO
I
Tj
EBO
C
C
−55 to +150
∗ Denotes h
Limits
External dimensions (Units : mm)
150
0.2
0.5
40
32
2SC2411K
5
ROHM : SMT3
EIAJ : SC-59
(1)
0.95 0.95
2.9±0.2
1.9±0.2
FE
Abbreviated symbol : C∗
(2)
(3)
0.4
All terminals have same dimensions
+0.1
−0.05
Unit
°C
°C
W
V
V
V
A
(1) Emitter
(2) Base
(3) Collector
*
0.15
−0.06
+0.1
1.1
0.8±0.1
+0.2
−0.1
0 ∼ 0.1
Rev.A
2SC2411K
1/3
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2SC2411KT146R Summary of contents
Transistors Medium Power Transistor (32V, 0.5A) 2SC2411K Features 1) High I . CMax . = 0.5A I CMax 2) Low V . CE(sat) Optimal for low voltage operation. 3) Complements the 2SA1036K. Structure Epitaxial planar type NPN silicon transistor Absolute ...
Transistors Electrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Packaging Specifications and h FE Package Code ...
Transistors ° 0.5 0.2 0.1 0.05 0.02 0 100 200 500 1000 ( mA) COLLECTOR CURRENT : I C Fig.4 Collector-emitter saturation voltage ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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