2N6426G ON Semiconductor, 2N6426G Datasheet
2N6426G
Specifications of 2N6426G
Related parts for 2N6426G
2N6426G Summary of contents
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... Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage, (Note mAdc Collector −Base Breakdown Voltage = 100 mAdc Emitter −Base Breakdown Voltage = 10 mAdc, ...
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BANDWIDTH = 1.0 Hz ≈ 200 100 50 100 1 5 100 200 500 FREQUENCY ...
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SMALL−SIGNALCHARACTERISTICS 20 10 7.0 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2 REVERSE VOLTAGE (VOLTS) R Figure 6. Capacitance 200 125°C J 100 25° ...
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... V , COLLECTOR−EMITTER VOLTAGE (VOLTS) CE Figure 13. Active Region Safe Operating Area ORDERING INFORMATION Device 2N6426G 2N6426RLRAG 2N6427G 2N6427RLRAG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 2N6426, 2N6427 5 ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...