2N5087G ON Semiconductor, 2N5087G Datasheet

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2N5087G

Manufacturer Part Number
2N5087G
Description
TRANSISTOR SS PNP 50V 50MA TO-92
Manufacturer
ON Semiconductor
Type
Amplifierr
Datasheets

Specifications of 2N5087G

Transistor Type
PNP
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 100µA, 5V
Power - Max
625mW
Frequency - Transition
40MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Current, Collector
50 mA
Current, Gain
250
Frequency
40 MHz
Package Type
TO-92
Polarity
PNP
Power Dissipation
1.5 W
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
50 V
Voltage, Collector To Base
50 V
Voltage, Collector To Emitter
50 V
Voltage, Collector To Emitter, Saturation
0.3 V
Voltage, Emitter To Base
3 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Other names
2N5087G
2N5087GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N5087G
Manufacturer:
ON
Quantity:
19 600
Part Number:
2N5087G
Manufacturer:
ON Semiconductor
Quantity:
800
2N5087
Amplifier Transistor
PNP Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
Derate above 25°C
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Pb−Free Packages are Available*
Characteristic
Rating
A
C
Preferred Device
= 25°C
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
P
P
, T
CEO
CBO
EBO
I
qJA
qJC
C
D
D
stg
−55 to +150
Value
Max
83.3
625
200
3.0
5.0
1.5
50
50
50
12
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
°C
W
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
2N5087
2N5087G
2N5087RLRAG
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
CASE 29
STYLE 1
Device
TO−92
(Note: Microdot may be in either location)
ORDERING INFORMATION
A
Y
WW
G
STRAIGHT LEAD
BASE
MARKING DIAGRAM
http://onsemi.com
2
BULK PACK
1 2
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Pb−Free)
(Pb−Free)
3
Package
TO−92
TO−92
TO−92
AYWW G
5087
3 COLLECTOR
2N
1 EMITTER
G
Publication Order Number:
2000/T ape & Reel
5000 Units / Bulk
5000 Units / Bulk
TAPE & REEL
AMMO PACK
BENT LEAD
1
Shipping
2
3
2N5087/D

Related parts for 2N5087G

2N5087G Summary of contents

Page 1

... J stg Symbol Max Unit °C/W R 200 qJA °C/W R 83.3 qJC 2N5087 2N5087G 2N5087RLRAG †For information on tape and reel specifications, Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com 3 COLLECTOR 2 BASE 1 EMITTER TO−92 CASE 29 STYLE 1 1 ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) Collector−Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter On Voltage SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (I Collector−Base Capacitance Small−Signal ...

Page 3

TYPICAL NOISE CHARACTERISTICS 10 BANDWIDTH = 1 3.0 100 mA 300 mA 1.0 mA 2.0 1 100 200 500 1 FREQUENCY (Hz) Figure 1. Noise ...

Page 4

TYPICAL STATIC CHARACTERISTICS 400 200 100 0.003 0.005 0.01 0.02 0.03 0.05 0.07 0.1 1 0.6 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 ...

Page 5

TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 100 0 BE(off) 10 7.0 5.0 1.0 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA) C Figure 11. Turn−On Time 500 ...

Page 6

... Using Figure pulse width of 1.0 ms and D = 0.2, the AND @ V = 3.0 V reading of r(t) is 0.22. BE(off) The peak rise in junction temperature is therefore (pk) For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. http://onsemi.com 6 FIGURE 19 DUTY CYCLE ...

Page 7

... SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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