PBSS4140T,215 NXP Semiconductors, PBSS4140T,215 Datasheet
PBSS4140T,215
Specifications of PBSS4140T,215
934056515215
PBSS4140T T/R
PBSS4140T T/R
Available stocks
Related parts for PBSS4140T,215
PBSS4140T,215 Summary of contents
Page 1
DATA SHEET PBSS4140T NPN low V Product data sheet Supersedes data of 2005 Feb 14 DISCRETE SEMICONDUCTORS (BISS) transistor CEsat 2005 Feb 24 ...
Page 2
... NXP Semiconductors NPN low V (BISS) transistor CEsat FEATURES • Low collector-emitter saturation voltage • High current capabilities. • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting • LCD backlighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices) ...
Page 3
... NXP Semiconductors NPN low V (BISS) transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation ...
Page 4
... NXP Semiconductors NPN low V (BISS) transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off CBO current I collector-emitter cut-off CEO current I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage R equivalent on-resistance CEsat V base-emitter saturation BEsat ...
Page 5
... NXP Semiconductors NPN low V (BISS) transistor CEsat 1000 handbook, halfpage h FE 800 600 400 200 0 − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values handbook, halfpage V CEsat (mV (3) (2) 10 ...
Page 6
... NXP Semiconductors NPN low V (BISS) transistor CEsat 400 handbook, halfpage f T (MHz) 300 200 100 0 0 200 400 600 Fig.6 Transition frequency as a function of collector current. 2005 Feb 24 MLD664 800 1000 I C (mA) 6 Product data sheet PBSS4140T ...
Page 7
... NXP Semiconductors NPN low V (BISS) transistor CEsat PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2005 Feb scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2 ...
Page 8
... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
Page 9
... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...