2SB1132T100R Rohm Semiconductor, 2SB1132T100R Datasheet

TRANSISTOR PNP 32V 1A SOT-89

2SB1132T100R

Manufacturer Part Number
2SB1132T100R
Description
TRANSISTOR PNP 32V 1A SOT-89
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 2SB1132T100R

Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 100mA, 3V
Power - Max
2W
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 32 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 1 A
Maximum Dc Collector Current
- 2 A
Power Dissipation
2 W
Maximum Operating Frequency
150 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
82
Gain Bandwidth Product Ft
150 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SB1132T100R
2SB1132T100RTR

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Medium Power Transistor (32V,1A)
Features
1) Low V
2) Compliments 2SD1664 /
Structure
Epitaxial planar type
PNP silicon transistor
c
www.rohm.com
V
(I
2SD1858
2SB1132 / 2SA1515S / 2SB1237
2009 ROHM Co., Ltd. All rights reserved.
CE(sat)
C
/ I
B
= 500mA / 50mA)
CE(sat).
= 0.2V(Typ.)
Dimensions (Unit : mm)
0.65Max.
Denotes h
2SB1132
2SB1237
ROHM : MPT3
EIAJ : SC-62
1/4
Abbreviated symbol: BA
(1)
1.5 0.1
0.4 0.1
ROHM : ATV
2.54 2.54
+ −
+ −
6.8 0.2
(2)
FE
(1)
+ −
(3)
1.6 0.1
4.5
(2)
0.5 0.1
3.0 0.2
+ −
+ −
+ −
+0.2
−0.1
0.5 0.1
(3)
+ −
(1) Base
(2) Collector
(3) Emitter
0.4 0.1
1.5 0.1
+ −
1.05
(1) Emitter
(2) Collector
(3) Base
1.5
2.5 0.2
+0.2
−0.1
+ −
0.45 0.1
0.4
+ −
+0.1
−0.05
2SA1515S
5
ROHM : SPT
EIAJ : SC-72
(1) (2) (3)
4 0.2
+ −
2.5 +0.4
0.45
−0.1
+0.15
−0.05
2009.12 - Rev.C
(1) Emitter
(2) Collector
(3) Base
0.5
2 0.2
+ −
0.45
+0.15
−0.05

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2SB1132T100R Summary of contents

Page 1

Medium Power Transistor (32V,1A) 2SB1132 / 2SA1515S / 2SB1237 Features 1) Low V CE(sat). = 0.2V(Typ.) V CE(sat) = 500mA / 50mA Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor www.rohm.com ...

Page 2

Parameter Symbol Collector-base voltage V CBO V Collector-emitter voltage CEO Emitter-base voltage V EBO I Collector current C 2SB1132 Collector power P C dissipation 2SA1515S 2SB1237 Junction temperature Tj Storage temperature ...

Page 3

-200 = -100 Ta 100 − - -20 - -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 ...

Page 4

Ta=25 C 100 10 1 0.1 0.001 0.01 0.1 10 100 1000 1 TIME : t (s) Fig.10 Transient thermal resistance (2SB1132) www.rohm.com ○ 2009 ROHM Co., Ltd. All rights reserved. c −5 Ta=25 ...

Page 5

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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