TIP31AG ON Semiconductor, TIP31AG Datasheet - Page 4

• Manufacturer Part Number: TIP31AG
• Description: TRANS NPN 3A 60V HI PWR TO220AB
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of TIP31AG

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 375mA, 3A
• Current - Collector Cutoff (max): 300µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 3A, 4V
• Power - Max: 2W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 3 A
• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Frequency: 3 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 3 A
• Current, Gain: 50
• Frequency: 3 MHz
• Package Type: TO-220AB
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 3.125 °C/W
• Voltage, Breakdown, Collector To Emitter: 60 V
• Voltage, Collector To Base: 60 V
• Voltage, Collector To Emitter: 60 V
• Voltage, Collector To Emitter, Saturation: 1.2 V
• Voltage, Emitter To Base: 5 V
• Number Of Elements: 1
• Collector-emitter Voltage: 60V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 3A
• Dc Current Gain (min): 25
• Frequency (max): 3MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TIP31AGOS

5.0
2.0
1.0
0.5
0.2
0.1
10
0.07
0.05
0.03
0.07
0.05
0.03
0.02
0.01
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
0.7
0.5
0.3
0.2
0.1
5.0
0.03
0.01
CURVES APPLY
BELOW RATED V
Figure 5. Active Region Safe Operating Area
V
0.01
CE
t
f
0.05
@ V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.02
D = 0.5
CC
t
SECONDARY BREAKDOWN
LIMITED @ T
THERMAL LIMIT @ T
(SINGLE PULSE)
BONDING WIRE LIMIT
0.07
f
0.05
0.02
@ V
0.2
0.1
10
I
= 10 V
SINGLE PULSE
C
, COLLECTOR CURRENT (AMP)
0.1
CC
Figure 6. Turn−Off Time
CEO
0.05
= 30 V
J
≤ 150°C
0.2
20
1.0
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
C
0.3
t
5.0 ms
= 25°C
s
′
0.2
0.5
0.7
50
0.5
1.0
1.0 ms
Figure 4. Thermal Response
I
I
t
T
B1
C
s
100 ms
J
′ = t
/I
= 25°C
B
= I
= 10
s
B2
1.0
- 1/8 t
http://onsemi.com
2.0 3.0
100
f
2.0
t, TIME (ms)
4
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150°C. T
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
300
200
100
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
There are two limitations on the power handling ability of
The data of Figure 5 is based on T
70
50
30
5.0
qJC(t)
J(pk)
qJC
0.1
(t) = 3.125°C/W MAX
- T
= r(t) R
C
10
0.2
= P
qJC
(pk)
0.3
1
J(pk)
V
Z
R
20
qJC(t)
, REVERSE VOLTAGE (VOLTS)
0.5
Figure 7. Capacitance
may be calculated from the data in
1.0
50
2.0 3.0
P
DUTY CYCLE, D = t
100
(pk)
C
t
5.0
1
eb
J(pk)
200
t
2
= 150°C; T
10
T
1
/t
500
J
2
= + 25°C
20
C
− V
C
30
cb
1.0 k
J(pk)
C
40
CE
is