2SB1184TLR Rohm Semiconductor, 2SB1184TLR Datasheet
2SB1184TLR
Manufacturer Part Number
2SB1184TLR
Description
TRANS PNP 50V 3A SOT-428
Manufacturer
Rohm Semiconductor
Datasheet
1.2SB1184TLQ.pdf
(4 pages)
Specifications of 2SB1184TLR
Transistor Type
PNP
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
1V @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 500mA, 3V
Power - Max
1W
Frequency - Transition
70MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
2SB1184TLR
2SB1184TLRTR
2SB1184TLRTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SB1184TLR
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Power Transistor (-60V, -3A)
Features
1) Low V
2) Complements the 2SD1760 / 2SD1864.
Structure
Epitaxial planar type
PNP silicon transistor
Absolute maximum ratings (Ta=25C)
Electrical characteristics (Ta=25C)
∗
○
∗
c
1 Printed circuit board, 1.7mm thick, collector copper plating 100mm
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
www.rohm.com
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Measured using pulse current.
(I
2SB1184 / 2SB1243
V
2010 ROHM Co., Ltd. All rights reserved.
C
CE(sat)
/I
B
= -2A / -0.2A)
Parameter
CE(sat)
= -0.5V (Typ.)
Parameter
.
2SB1184
2SB1243
Symbol
V
V
V
Tstg
P
CBO
CEO
I
Tj
EBO
C
C
Symbol
V
BV
BV
BV
Cob
I
I
CE(sat)
h
CBO
EBO
f
FE
CBO
CEO
EBO
T
−55 to 150
Min.
−60
−50
120
−5
Limits
−
−
−
−
−
−60
−50
150
−5
−3
15
1
1
2
Typ.
or larger.
70
50
−
−
−
−
−
−
−
W (T
Max.
Dimensions (Unit : mm)
390
−1
−1
−1
−
−
−
−
−
A (DC)
2SB1184
°C
°C
Unit
0.75
C
ROHM : CPT3
EIAJ : SC-63
W
W
2.3±0.2
V
V
V
=25°C)
1/3
0.9
(1)
MHz
Unit
6.5±0.2
5.1
μA
μA
pF
V
V
V
V
−
(2)
+0.2
−0.1
2.3±0.2
∗1
(3)
0.65±0.1
I
I
I
V
V
I
V
V
V
C
C
E
C
= −50μA
CB
EB
CE
CE
CB
= −50μA
= −1mA
/I
C0.5
B
= −40V
= −4V
= −3V, I
= −5V, I
= −10V, I
= −2A/ −0.2A
(1) Base
(2) Collector
(3) Emitter
Conditions
C
E
0.5±0.1
1.0±0.2
2.3
0.55±0.1
=0.5A, f=30MHz
= −0.5A
E
=0A, f=1MHz
+0.2
−0.1
0.65Max.
2SB1243
(1)
∗
∗
ROHM : ATV
2.54 2.54
6.8
(2)
±
0.2
(3)
0.5
2010.02 - Rev.C
±
0.1
1.05
(1) Emitter
(2) Collector
(3) Base
2.5
±
0.2
0.45
±
0.1
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2SB1184TLR Summary of contents
Page 1
Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Features 1) Low V . CE(sat -0.5V (Typ.) CE(sat -2A / -0.2A Complements the 2SD1760 / 2SD1864. Structure Epitaxial planar type PNP silicon transistor Absolute ...
Page 2
FE Package Code h Type Basic ordering unit (pieces) FE 2SB1184 QR 2SB1243 QR h values are classified as follows : FE Item 120 to 270 180 to 390 FE ...
Page 3
COLLECTOR TO EMITTER VOLTAGE : V (V) CE Safe operation area Fig.10 (2SB1184) www.rohm.com ○ 2010 ROHM Co., Ltd. All rights reserved. c −10 (Pulse)∗ Ta=25°C C Max −5.0 ∗Single nonrepetitive pulse −2.0 ...
Page 4
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...