TIP31G ON Semiconductor, TIP31G Datasheet - Page 4

TRANS NPN 3A 40V HI PWR TO220AB

TIP31G

Manufacturer Part Number
TIP31G
Description
TRANS NPN 3A 40V HI PWR TO220AB
Manufacturer
ON Semiconductor
Datasheet

Specifications of TIP31G

Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1.2V @ 375mA, 3A
Current - Collector Cutoff (max)
300µA
Dc Current Gain (hfe) (min) @ Ic, Vce
10 @ 3A, 4V
Power - Max
2W
Frequency - Transition
3MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
3 A
Power Dissipation
40 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
3 A
Dc Collector/base Gain Hfe Min
25
Gain Bandwidth Product Ft
3 MHz
Maximum Operating Frequency
3 MHz
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TIP31GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TIP31G
Manufacturer:
ON
Quantity:
4 375
5.0
2.0
1.0
0.5
0.2
0.1
10
0.07
0.05
0.03
0.07
0.05
0.03
0.02
0.01
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
0.7
0.5
0.3
0.2
0.1
5.0
0.03
0.01
CURVES APPLY
BELOW RATED V
Figure 5. Active Region Safe Operating Area
V
0.01
CE
t
f
0.05
@ V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.02
D = 0.5
CC
t
SECONDARY BREAKDOWN
LIMITED @ T
THERMAL LIMIT @ T
(SINGLE PULSE)
BONDING WIRE LIMIT
0.07
f
0.05
0.02
@ V
0.2
0.1
10
I
= 10 V
SINGLE PULSE
C
, COLLECTOR CURRENT (AMP)
0.1
CC
Figure 6. Turn−Off Time
CEO
0.05
= 30 V
J
≤ 150°C
0.2
20
1.0
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
C
0.3
t
5.0 ms
= 25°C
s
0.2
0.5
0.7
50
0.5
1.0
1.0 ms
Figure 4. Thermal Response
I
I
t
T
B1
C
s
100 ms
J
′ = t
/I
= 25°C
B
= I
= 10
s
B2
1.0
- 1/8 t
http://onsemi.com
2.0 3.0
100
f
2.0
t, TIME (ms)
4
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150°C. T
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
300
200
100
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
There are two limitations on the power handling ability of
The data of Figure 5 is based on T
70
50
30
5.0
qJC(t)
J(pk)
qJC
0.1
(t) = 3.125°C/W MAX
- T
= r(t) R
C
10
0.2
= P
qJC
(pk)
0.3
1
J(pk)
V
Z
R
20
qJC(t)
, REVERSE VOLTAGE (VOLTS)
0.5
Figure 7. Capacitance
may be calculated from the data in
1.0
50
2.0 3.0
P
DUTY CYCLE, D = t
100
(pk)
C
t
5.0
1
eb
J(pk)
200
t
2
= 150°C; T
10
T
1
/t
500
J
2
= + 25°C
20
C
− V
C
30
cb
1.0 k
J(pk)
C
40
CE
is

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