TIP121G ON Semiconductor, TIP121G Datasheet

TRANS DARL NPN 5A 80V TO220AB

TIP121G

Manufacturer Part Number
TIP121G
Description
TRANS DARL NPN 5A 80V TO220AB
Manufacturer
ON Semiconductor
Type
Medium Power, Switchr
Datasheets

Specifications of TIP121G

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
4V @ 20mA, 5A
Current - Collector Cutoff (max)
500µA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 3A, 3V
Power - Max
2W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
80 V
Maximum Dc Collector Current
5 A
Maximum Collector Cut-off Current
200 uA
Power Dissipation
65 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
5 A
Dc Collector/base Gain Hfe Min
1000
Minimum Operating Temperature
- 65 C
Current, Gain
2500
Current, Input
120 mA
Current, Output
5 A
Package Type
TO-220AB
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Ambient
62.5
Voltage, Collector To Emitter, Saturation
4 V
Voltage, Input
2.5 V
Voltage, Output
80 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
TIP121GOS
TIP120, TIP121, TIP122
(NPN); TIP125, TIP126,
TIP127 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
applications.
Features
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Designed for general-purpose amplifier and low-speed switching
High DC Current Gain -
Collector-Emitter Sustaining Voltage - @ 100 mAdc
Low Collector-Emitter Saturation Voltage -
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Pb-Free Packages are Available*
h
V
V
FE
CEO(sus)
CE(sat)
= 2500 (Typ) @ I
= 4.0 Adc
= 2.0 Vdc (Max) @ I
= 4.0 Vdc (Max) @ I
= 60 Vdc (Min) - TIP120, TIP125
= 80 Vdc (Min) - TIP121, TIP126
= 100 Vdc (Min) - TIP122, TIP127
Preferred Devices
C
C
C
= 3.0 Adc
= 5.0 Adc
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
60-80-100 VOLTS, 65 WATTS
COMPLEMENTARY SILICON
2
3
POWER TRANSISTORS
TIP12x
x
A
Y
WW
G
ORDERING INFORMATION
DARLINGTON
4
5 AMPERE
CASE 221A
TO-220AB
= Device Code
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
= Work Week
= Pb-Free Package
STYLE 1
MARKING
DIAGRAM
TIP12xG
AYWW

Related parts for TIP121G

TIP121G Summary of contents

Page 1

... CE(sat) = 4.0 Vdc (Max • Monolithic Construction with Built-In Base-Emitter Shunt Resistors • Pb-Free Packages are Available* *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/ 3.0 Adc C = 5.0 Adc C ...

Page 2

... Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability 100 mH, P.R. Hz ORDERING INFORMATION Device TIP120 TIP120G TIP121 TIP121G TIP122 TIP122G TIP125 TIP125G TIP126 TIP126G TIP127 TIP127G Î Î Î Î Î Symbol Î ...

Page 3

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...

Page 4

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI ...

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