PBSS305PZ,135 NXP Semiconductors, PBSS305PZ,135 Datasheet - Page 8

• Manufacturer Part Number: PBSS305PZ,135
• Description: TRANS PNP 80V 4.5A SOT-223
• Manufacturer: NXP Semiconductors

Specifications of PBSS305PZ,135

• Transistor Type: PNP
• Current - Collector (ic) (max): 4.5A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 450mV @ 225mA, 4.5A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 2A, 2V
• Power - Max: 2W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 568-4182-2; 934059053135; PBSS305PZ /T3; PBSS305PZ /T3

NXP Semiconductors
PBSS305PZ_2
Product data sheet
Fig 9.
Fig 11. Collector-emitter saturation resistance as a
V
R
CEsat
−10
−10
CEsat
(V)
(Ω)
(1) T
(2) T
(3) T
10
10
(1) T
(2) T
(3) T
−10
10
10
−1
10
−1
−2
−1
−2
−10
−10
3
2
1
I
Collector-emitter saturation voltage as a
function of collector current; typical values
I
function of collector current; typical values
C
C
−1
−1
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 20
= 20
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
−1
−1
−10
−10
(1)
(2)
(3)
−10
−10
2
2
−10
−10
(1)
(2)
(3)
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3
I
3
I
C
C
(mA)
(mA)
Rev. 02 — 8 December 2009
−10
−10
4
4
Fig 10. Collector-emitter saturation voltage as a
Fig 12. Collector-emitter saturation resistance as a
R
V
−10
−10
−10
CEsat
CEsat
(Ω)
(V)
(1) I
(2) I
(3) I
10
10
(1) I
(2) I
(3) I
−10
10
10
−1
10
−1
−2
−3
−1
−2
−10
−10
1
3
2
T
function of collector current; typical values
T
function of collector current; typical values
80 V, 4.5 A PNP low V
C
C
C
C
C
C
−1
−1
amb
amb
/I
/I
/I
/I
/I
/I
B
B
B
B
B
B
= 100
= 50
= 10
= 100
= 50
= 10
= 25 °C
= 25 °C
−1
−1
−10
−10
(1)
(2)
(3)
−10
−10
PBSS305PZ
2
2
CEsat
(1)
(2)
(3)
−10
−10
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
006aaa632
006aaa636
3
I
3
I
C
C
(mA)
(mA)
−10
−10
4
4
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