TRANS PWR NPN 4A 400V TO220AB

MJE13005G

Manufacturer Part NumberMJE13005G
DescriptionTRANS PWR NPN 4A 400V TO220AB
ManufacturerON Semiconductor
SeriesSWITCHMODE™
TypePower
MJE13005G datasheets
 

Specifications of MJE13005G

Transistor TypeNPNCurrent - Collector (ic) (max)4A
Voltage - Collector Emitter Breakdown (max)400VVce Saturation (max) @ Ib, Ic1V @ 1A, 4A
Dc Current Gain (hfe) (min) @ Ic, Vce8 @ 2A, 5VPower - Max2W
Frequency - Transition4MHzMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityNPN
Mounting StyleThrough HoleCollector- Emitter Voltage Vceo Max400 V
Emitter- Base Voltage Vebo9 VMaximum Dc Collector Current4 A
Power Dissipation2 WMaximum Operating Temperature+ 150 C
Continuous Collector Current4 ADc Collector/base Gain Hfe Min10
Maximum Operating Frequency4 MHzMinimum Operating Temperature- 65 C
Current, Collector4 ACurrent, Emitter6 A
Current, Gain40Frequency4 MHz
Package TypeTO-220ABPolarityNPN
Primary TypeSiResistance, Thermal, Junction To Case1.67 °C/W
Voltage, Breakdown, Collector To Emitter400 VVoltage, Collector To Emitter700 V
Voltage, Collector To Emitter, Saturation1 VVoltage, Emitter To Base9 V
Lead Free Status / RoHS StatusLead free / RoHS CompliantCurrent - Collector Cutoff (max)-
Other namesMJE13005GOS  
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MJE13005G
SWITCHMODEt Series
NPN Silicon Power
Transistors
These devices are designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulator’s, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
V
400 V
CEO(sus)
Reverse Bias SOA with Inductive Loads @ T
Inductive Switching Matrix 2 to 4 A, 25 and 100_C t
100_C is 180 ns (Typ)
700 V Blocking Capability
SOA and Switching Applications Information
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
− Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Emitter Current
− Continuous
− Peak (Note 1)
Total Device Dissipation @ T
= 25_C
A
Derate above 25°C
Total Device Dissipation @ T
= 25_C
C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 9
= 100_C
C
@ 3A,
c
Symbol
Value
Unit
V
400
Vdc
CEO(sus)
V
700
Vdc
CEV
V
9
Vdc
EBO
I
4
Adc
C
I
8
CM
I
2
Adc
B
I
4
BM
I
6
Adc
E
I
12
EM
P
2
W
D
0.016
W/_C
P
75
W
D
0.6
W/_C
T
, T
−65 to
_C
J
stg
+150
Symbol
Max
Unit
R
62.5
_C/W
qJA
R
1.67
_C/W
qJC
T
275
_C
Device
L
MJE13005G
1
http://onsemi.com
4 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS − 75 WATTS
TO−220AB
CASE 221A−09
STYLE 1
1
2
3
MARKING DIAGRAM
MJE13005G
AY WW
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping
TO−220
50 Units / Rail
(Pb−Free)
Publication Order Number:
MJE13005/D

MJE13005G Summary of contents

  • Page 1

    ... Device L MJE13005G 1 http://onsemi.com 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 75 WATTS TO−220AB CASE 221A−09 STYLE MARKING DIAGRAM MJE13005G Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Package Shipping TO−220 50 Units / Rail (Pb−Free) Publication Order Number: MJE13005/D ...

  • Page 2

    ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

  • Page 3

    T = 150° 25° 55° 0.1 0.2 0.4 0.6 0.04 0. COLLECTOR CURRENT (AMP) C Figure 1. DC ...

  • Page 4

    I CPK 90% V clamp 10 90 TIME Figure 7. Inductive Switching Measurements Table 1. Typical Inductive Switching Performance Î Î Î Î Î Î Î Î Î ...

  • Page 5

    Table 2. Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING 0.001 DUTY CYCLE ≤ 10% 68 ≤ ...

  • Page 6

    The Safe Operating Area Figures 11 and 12 are specified ratings for these devices under the test conditions shown 0.5 0.2 0.1 0.05 0.02 0. 100 ...

  • Page 7

    ... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...