TRANS PWR NPN 4A 400V TO220AB

MJE13005G

Manufacturer Part NumberMJE13005G
DescriptionTRANS PWR NPN 4A 400V TO220AB
ManufacturerON Semiconductor
SeriesSWITCHMODE™
TypePower
MJE13005G datasheets
 

Specifications of MJE13005G

Transistor TypeNPNCurrent - Collector (ic) (max)4A
Voltage - Collector Emitter Breakdown (max)400VVce Saturation (max) @ Ib, Ic1V @ 1A, 4A
Dc Current Gain (hfe) (min) @ Ic, Vce8 @ 2A, 5VPower - Max2W
Frequency - Transition4MHzMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityNPN
Mounting StyleThrough HoleCollector- Emitter Voltage Vceo Max400 V
Emitter- Base Voltage Vebo9 VMaximum Dc Collector Current4 A
Power Dissipation2 WMaximum Operating Temperature+ 150 C
Continuous Collector Current4 ADc Collector/base Gain Hfe Min10
Maximum Operating Frequency4 MHzMinimum Operating Temperature- 65 C
Current, Collector4 ACurrent, Emitter6 A
Current, Gain40Frequency4 MHz
Package TypeTO-220ABPolarityNPN
Primary TypeSiResistance, Thermal, Junction To Case1.67 °C/W
Voltage, Breakdown, Collector To Emitter400 VVoltage, Collector To Emitter700 V
Voltage, Collector To Emitter, Saturation1 VVoltage, Emitter To Base9 V
Lead Free Status / RoHS StatusLead free / RoHS CompliantCurrent - Collector Cutoff (max)-
Other namesMJE13005GOS  
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The Safe Operating Area Figures 11 and 12 are specified ratings for these devices under the test conditions shown.
10
5
2
5 ms
dc
1
0.5
0.2
0.1
0.05
0.02
0.01
5
7
10
20
30
50 70 100
V
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 11. Forward Bias Safe Operating Area
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on T
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
≥ 25_C. Second breakdown limitations do
C
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 11 may be found at
any case temperature by using the appropriate curve on
Figure 13.
T
may be calculated from the data in Figure 10. At
J(pk)
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
1
0.8
0.6
0.4
0.2
0
SAFE OPERATING AREA INFORMATION
4
500 ms
3
2
1 ms
1
MJE13005
0
200
300
500
0
100
400
V
CE
Figure 12. Reverse Bias Switching Safe Operating Area
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
− V
with the base to emitter junction reverse biased. Under these
C
CE
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
= 25_C; T
is
snubbing, load line shaping, etc. The safe level for these
C
J(pk)
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 12 gives the complete RBSOA
characteristics.
SECOND BREAKDOWN
DERATING
THERMAL
DERATING
20
40
60
80
100
120
T
, CASE TEMPERATURE (°C)
C
Figure 13. Forward Bias Power Derating
http://onsemi.com
6
≤ 100°C
T
C
I
= 2.0 A
B1
V
= 9 V
BE(off)
MJE13005
200
300
400
500
600
700
, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS)
140
160
5 V
3 V
1.5 V
800