TIP102G ON Semiconductor, TIP102G Datasheet - Page 4

• Manufacturer Part Number: TIP102G
• Description: TRANS DARL NPN 8A 100V TO220AB
• Manufacturer: ON Semiconductor
• Type: Medium Power, Switchr

Specifications of TIP102G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 2.5V @ 80mA, 8A
• Current - Collector Cutoff (max): 50µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 3A, 4V
• Power - Max: 2W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 100 V
• Maximum Dc Collector Current: 8 A
• Maximum Collector Cut-off Current: 50 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 200
• Minimum Operating Temperature: - 65 C
• Current, Gain: 200
• Current, Input: 1 A
• Current, Output: 8 A
• Package Type: TO-220AB
• Polarity: NPN
• Power Dissipation: 80 W
• Primary Type: Si
• Resistance, Thermal, Junction To Ambient: 62.5
• Voltage, Collector To Emitter, Saturation: 2.5 V
• Voltage, Input: 2.8 V
• Voltage, Output: 100 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: TIP102GOS

approx
approx
+ 8.0 V
-12 V
0.05
0.02
V
V
R
D
t
DUTY CYCLE = 1.0%
5.0
2.0
1.0
0.5
0.2
0.1
r
20
10
2
1
1N5825 USED ABOVE I
MSD6100 USED BELOW I
, t
B
1
, MUST BE FAST RECOVERY TYPE, eg:
0
f
1.0
& R
0.07
0.05
0.03
0.02
0.01
Figure 5. Active-Region Safe Operating Area
≤ 10 ns
1.0
0.7
0.5
0.3
0.2
0.1
C
0.01
VARIED TO OBTAIN DESIRED CURRENT LEVELS
Figure 2. Switching Times Test Circuit
D = 0.5
2.0
V
0.05
0.02
0.01
CE
0.2
0.1
0.02
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
T
J
= 150°C
25 ms
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
SINGLE PULSE
B
5.0
≈ 100 mA
B
0.05
≈ 100 mA
51
for t
and V
For NPN test circuit reverse all polarities.
100 ms
10
d
0.1
and t
2
1 ms
R
= 0
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
D
B
1
+ 4.0 V
r
, D
C
5 ms
= 25°C
1
0.2
20
is disconnected
≈ 8.0 k ≈ 120
d‐
CEO
c
TUT
0.5
50
R
Figure 4. Thermal Response
C
- 30 V
V
http://onsemi.com
CC
1.0
100
SCOPE
2.0
t, TIME (ms)
4
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
< 150°C. T
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown
0.07
0.05
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
There are two limitations on the power handling ability of
The data of Figure 5 is based on T
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
0.1
5.0
qJC(t)
J(pk)
qJC
V
I
I
T
C
B1
= 1.56°C/W MAX
CC
J
- T
/I
= r(t) R
= 25°C
B
= I
= 30 V
C
= 250
10
B2
0.2
J(pk)
= P
qJC
(pk)
0.3
1
may be calculated from the data in Figure 4.
Figure 3. Switching Times
Z
I
20
C
qJC(t)
, COLLECTOR CURRENT (AMP)
t
d
t
s
@ V
0.5 0.7 1.0
BE(off)
50
= 0 V
P
(pk)
DUTY CYCLE, D = t
100
t
t
1
f
2.0 3.0
J(pk)
t
2
200
PNP
NPN
= 150°C; T
t
r
5.0 7.0
1
/t
500
2
C
- V
1.0 k
J(pk)
C
10
CE
is