MJE13007G ON Semiconductor, MJE13007G Datasheet - Page 4

• Manufacturer Part Number: MJE13007G
• Description: TRANS PWR NPN 8A 400V TO220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r
• Type: Powerr

Specifications of MJE13007G

• Transistor Type: NPN
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 3V @ 2A, 8A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 5 @ 5A, 5V
• Power - Max: 80W
• Frequency - Transition: 14MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 400 V
• Emitter- Base Voltage Vebo: 9 V
• Maximum Dc Collector Current: 8 A
• Power Dissipation: 80 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 8 A
• Dc Collector/base Gain Hfe Min: 8
• Maximum Operating Frequency: 14 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 8 A
• Current, Gain: 30
• Frequency: 14 MHz
• Package Type: TO-220AB
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 1.56 °C/W
• Voltage, Breakdown, Collector To Emitter: 400 V
• Voltage, Collector To Emitter: 400 V
• Voltage, Collector To Emitter, Saturation: 3 V
• Voltage, Emitter To Base: 9 V
• Number Of Elements: 1
• Collector-emitter Voltage: 400V
• Emitter-base Voltage: 9V
• Collector Current (dc) (max): 8A
• Dc Current Gain (min): 8
• Frequency (max): 14MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJE13007GOS

0.05
0.02
0.01
100
0.5
0.2
0.1
0.8
0.6
0.4
0.2
0.07
0.05
0.02
0.01
50
20
10
0.7
0.5
0.2
0.1
5
2
1
1
0
10
20
1
0.01
T
D = 0.01
C
D = 0.02
D = 0.05
D = 0.5
D = 0.2
D = 0.1
= 25°C
Figure 8. Forward Bias Power Derating
0.02
20 30
V
40
Figure 6. Maximum Forward Bias
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW
RATED V
SINGLE PULSE
DC
T
60
Safe Operating Area
C
DERATING
, CASE TEMPERATURE (°C)
THERMAL
0.05
CEO
50
70 100 200
80
0.1
Extended SOA @ 1 ms, 10 ms
5 ms
100
Figure 9. Typical Thermal Response for MJE13007
0.2
SECOND BREAKDOWN
1 ms
10 ms
DERATING
120
300 500
0.5
140
1 ms
http://onsemi.com
1
1000
160
t, TIME (msec)
2
4
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when T
derate the same as thermal limitations. Allowable current at
the voltages shown on Figure 6 may be found at any case
temperature by using the appropriate curve on Figure 8.
the power that can be handled to values less than the
limitations imposed by second breakdown.
is discussed in the applications information section.
There are two limitations on the power handling ability of
The data of Figure 6 is based on T
At high case temperatures, thermal limitations will reduce
Use of reverse biased safe operating area data (Figure 7)
5
10
8
6
4
2
0
t
t
1
2
DUTY CYCLE, D = t
P
0
C
(pk)
Figure 7. Maximum Reverse Bias Switching
V
≥ 25°C. Second breakdown limitations do not
10
CEV
T
GAIN ≥ 4
L
100
C
C
, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS)
= 500 mH
≤ 100°C
20
200
Safe Operating Area
1
/t
2
300
50
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
qJC
400
(t) = r(t) R
= 1.56°C/W MAX
- T
100
C
= P
500
C
qJC
(pk)
0 V
200
1
= 25°C; T
R
qJC
600
(t)
500
700
V
C
BE(off)
J(pk)
- 5 V
- 2 V
− V
10 k
CE
800
is