2SA1862TLP Rohm Semiconductor, 2SA1862TLP Datasheet

TRANSISTOR PNP 400V 2A SOT-428

2SA1862TLP

Manufacturer Part Number

2SA1862TLP

Description

TRANSISTOR PNP 400V 2A SOT-428

Manufacturer

Rohm Semiconductor

Datasheets

1.2SA1862TLP.pdf (1 pages)

2.2SA1862TLP.pdf (3 pages)

Specifications of 2SA1862TLP

Transistor Type

PNP

Current - Collector (ic) (max)

2A

Voltage - Collector Emitter Breakdown (max)

400V

Vce Saturation (max) @ Ib, Ic

500mV @ 100mA, 500mA

Dc Current Gain (hfe) (min) @ Ic, Vce

82 @ 100mA, 5V

Power - Max

1W

Frequency - Transition

18MHz

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Transistor Polarity

PNP

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

- 400 V

Emitter- Base Voltage Vebo

- 7 V

Maximum Dc Collector Current

2 A

Power Dissipation

1 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

- 2 A

Dc Collector/base Gain Hfe Min

82

Gain Bandwidth Product Ft

18 MHz

Maximum Operating Frequency

18 MHz

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

-

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

2SA1862TLP
2SA1862TLPTR

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Transistors

High-voltage Switching Transistor

(−400V, −2A)

2SA1862

! ! ! ! Features

1) High breakdown voltage. (BV

2) Low saturation voltage.

3) High switching speed, typically tf = 0.4µs at I

4) Wide SOA (safe operating area).

! ! ! ! Absolute maximum ratings (Ta = 25°C)

! ! ! ! Packaging specifications and h

! ! ! ! Electrical characteristics (Ta = 25°C)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

*

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

Turn-on time

Storage time

Fall time

Basic ordering unit (pieces)

(Typ. V

Single pulse, Pw = 10ms

Package

Parameter

Code

Type

CE (sat)

Parameter

h

FE

= −0.3V at I

2SA1862

CPT3

2500

Symbol

C

TL

P

V

V

V

Tstg

P

Symbol

/ I

Tj

CBO

CEO

EBO

I

V

V

BV

BV

BV

C

C

I

Cob

I

CE(sat)

CE(sat)

tstg

ton

CBO

EBO

h

B

f

tf

CBO

CEO

EBO

T

FE

CEO

= −500mA / −100mA)

= −400V)

FE

−55~+150

−400

−400

Min.

Limits

−7

−400

−400

82

−

−

−

−

−

−

−

−

−

150

−7

−2

−4

10

1

−0.3

Typ.

0.2

1.8

0.4

18

30

−

−

−

−

−

−

−

C

W (Tc = 25 ˚C)

= −1A.

A (Pulse)

Max.

−0.5

−1.2

−10

−10

180

A (DC)

−

−

−

−

−

−

−

−

Unit

˚C

˚C

W

V

V

V

MHz

Unit

µA

µA

pF

µs

µs

µs

V

V

V

V

V

−

*

I

I

I

V

V

I

I

V

V

V

I

I

V

C

C

E

C

C

C

B1

CB

EB

CE

CB

CE

CC

/I

/I

= −50µA

= −1mA

= −50µA

= −1A, R

! ! ! ! External dimensions (Units : mm)

B

B

= −I

= −400V

= −5V

= −5V, I

= −10V, I

= −10V, I

= −0.5A / −0.1A

= −0.5A / −0.1A

150V

B2

= −0.2A

ROHM : CPT3

EIAJ : SC-63

L

C

= 150Ω

E

E

= −0.1A

= 0.1A, f = 5MHz

= 0A, f = 1MHz

Conditions

0.8Min.

2.5

1.5

0.9

9.5

5.5

1.5

C0.5

(1) Base(Gate)

(2) Collector(Drain)

(3) Emitter(Source)

2SA1862

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