TRANS NPN 5A 700V 75W TO220AB

BUL45D2G

Manufacturer Part NumberBUL45D2G
DescriptionTRANS NPN 5A 700V 75W TO220AB
ManufacturerON Semiconductor
BUL45D2G datasheet
 


Specifications of BUL45D2G

Transistor TypeNPNCurrent - Collector (ic) (max)5A
Voltage - Collector Emitter Breakdown (max)400VVce Saturation (max) @ Ib, Ic500mV @ 400mA, 2A
Current - Collector Cutoff (max)100µADc Current Gain (hfe) (min) @ Ic, Vce10 @ 2A, 1V
Power - Max75WFrequency - Transition13MHz
Mounting TypeThrough HolePackage / CaseTO-220-3 (Straight Leads)
Transistor PolarityNPNMounting StyleThrough Hole
Collector- Emitter Voltage Vceo Max400 VEmitter- Base Voltage Vebo12 V
Maximum Dc Collector Current5 APower Dissipation75 W
Maximum Operating Temperature+ 150 CContinuous Collector Current5 A
Dc Collector/base Gain Hfe Min22Maximum Operating Frequency13 MHz
Minimum Operating Temperature- 65 CLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesBUL45D2GOS  
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BUL45D2G
High Speed, High Gain
Bipolar NPN Power
Transistor
with Integrated Collector−Emitter Diode
and Built−in Efficient Antisaturation
Network
The BUL45D2G is state−of−art High Speed High gain BiPolar
transistor (H2BIP). High dynamic characteristics and lot−to−lot
minimum spread (±150 ns on storage time) make it ideally suitable for
light ballast applications. Therefore, there is no need to guarantee an h
window. It’s characteristics make it also suitable for PFC application.
Features
Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ I
Extremely Low Storage Time Min/Max Guarantees Due to
the H2BIP Structure which Minimizes the Spread
Integrated Collector−Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic V
“6 Sigma” Process Providing Tight and Reproductible
Parameter Spreads
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current
− Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Total Device Dissipation @ T
= 25_C
C
Derate above 25°C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 5
FE
= 100 mA
C
CE(sat)
Symbol
Value
Unit
V
400
Vdc
CEO
V
700
Vdc
CBO
V
700
Vdc
CES
V
12
Vdc
EBO
I
5
Adc
C
I
10
CM
I
2
Adc
B
I
4
BM
P
75
W
D
0.6
W/_C
T
, T
−65 to 150
_C
J
stg
Symbol
Max
Unit
R
1.65
_C/W
qJC
R
62.5
_C/W
qJA
T
260
_C
L
Device
BUL45D2G
1
http://onsemi.com
POWER TRANSISTOR
5.0 AMPERES,
700 VOLTS, 75 WATTS
TO−220AB
CASE 221A−09
STYLE 1
1
2
3
MARKING DIAGRAM
BUL45D2G
AY WW
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping
TO−220
50 Units / Rail
(Pb−Free)
Publication Order Number:
BUL45D2/D

BUL45D2G Summary of contents

  • Page 1

    ... Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor (H2BIP). High dynamic characteristics and lot−to−lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an h window. It’ ...

  • Page 2

    ELECTRICAL CHARACTERISTICS Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Characteristic Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...

  • Page 3

    ELECTRICAL CHARACTERISTICS Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Characteristic Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...

  • Page 4

    125° 25° 20° 0.001 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 1. DC Current Gain @ 1 ...

  • Page 5

    25° 20° 125°C J 0.1 0.001 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 7. Base−Emitter Saturation Region ...

  • Page 6

    TYPICAL SWITCHING CHARACTERISTICS 1000 125°C Bon Boff 300 25° 800 600 400 200 0 0.5 1 1.5 ...

  • Page 7

    TYPICAL SWITCHING CHARACTERISTICS 1500 125°C Boff Bon 25° 300 200 mH L 1000 C 500 ...

  • Page 8

    TYPICAL SWITCHING CHARACTERISTICS V CE dyn 1 ms dyn 90 TIME Figure 25. Dynamic Saturation Voltage Measurements ...

  • Page 9

    TYPICAL SWITCHING CHARACTERISTICS + 100 W 150 MPF930 MPF930 + COMMON 150 500 mF -V off 100 0.1 0.01 10 100 ...

  • Page 10

    There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I limits of the transistor that must be observed for reliable operation; i.e., the transistor must not ...

  • Page 11

    ... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...