BUL45D2G ON Semiconductor, BUL45D2G Datasheet
BUL45D2G
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BUL45D2G Summary of contents
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... Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor (H2BIP). High dynamic characteristics and lot−to−lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an h window. It’ ...
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ELECTRICAL CHARACTERISTICS Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Characteristic Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...
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ELECTRICAL CHARACTERISTICS Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Characteristic Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...
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125° 25° 20° 0.001 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 1. DC Current Gain @ 1 ...
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25° 20° 125°C J 0.1 0.001 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 7. Base−Emitter Saturation Region ...
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TYPICAL SWITCHING CHARACTERISTICS 1000 125°C Bon Boff 300 25° 800 600 400 200 0 0.5 1 1.5 ...
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TYPICAL SWITCHING CHARACTERISTICS 1500 125°C Boff Bon 25° 300 200 mH L 1000 C 500 ...
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TYPICAL SWITCHING CHARACTERISTICS V CE dyn 1 ms dyn 90 TIME Figure 25. Dynamic Saturation Voltage Measurements ...
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TYPICAL SWITCHING CHARACTERISTICS + 100 W 150 MPF930 MPF930 + COMMON 150 500 mF -V off 100 0.1 0.01 10 100 ...
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There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I limits of the transistor that must be observed for reliable operation; i.e., the transistor must not ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...