BUL45D2G | |
|---|---|
| Manufacturer Part Number | BUL45D2G |
| Description | TRANS NPN 5A 700V 75W TO220AB |
| Manufacturer | ON Semiconductor |
| BUL45D2G datasheet |
|
Specifications of BUL45D2G | |||
|---|---|---|---|
| Transistor Type | NPN | Current - Collector (ic) (max) | 5A |
| Voltage - Collector Emitter Breakdown (max) | 400V | Vce Saturation (max) @ Ib, Ic | 500mV @ 400mA, 2A |
| Current - Collector Cutoff (max) | 100µA | Dc Current Gain (hfe) (min) @ Ic, Vce | 10 @ 2A, 1V |
| Power - Max | 75W | Frequency - Transition | 13MHz |
| Mounting Type | Through Hole | Package / Case | TO-220-3 (Straight Leads) |
| Transistor Polarity | NPN | Mounting Style | Through Hole |
| Collector- Emitter Voltage Vceo Max | 400 V | Emitter- Base Voltage Vebo | 12 V |
| Maximum Dc Collector Current | 5 A | Power Dissipation | 75 W |
| Maximum Operating Temperature | + 150 C | Continuous Collector Current | 5 A |
| Dc Collector/base Gain Hfe Min | 22 | Maximum Operating Frequency | 13 MHz |
| Minimum Operating Temperature | - 65 C | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Other names | BUL45D2GOS | ||
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BUL45D2G
High Speed, High Gain
Bipolar NPN Power
Transistor
with Integrated Collector−Emitter Diode
and Built−in Efficient Antisaturation
Network
The BUL45D2G is state−of−art High Speed High gain BiPolar
transistor (H2BIP). High dynamic characteristics and lot−to−lot
minimum spread (±150 ns on storage time) make it ideally suitable for
light ballast applications. Therefore, there is no need to guarantee an h
window. It’s characteristics make it also suitable for PFC application.
Features
•
Low Base Drive Requirement
•
High Peak DC Current Gain (55 Typical) @ I
•
Extremely Low Storage Time Min/Max Guarantees Due to
the H2BIP Structure which Minimizes the Spread
•
Integrated Collector−Emitter Free Wheeling Diode
•
Fully Characterized and Guaranteed Dynamic V
•
“6 Sigma” Process Providing Tight and Reproductible
Parameter Spreads
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current
− Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Total Device Dissipation @ T
= 25_C
C
Derate above 25°C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 5
FE
= 100 mA
C
CE(sat)
Symbol
Value
Unit
V
400
Vdc
CEO
V
700
Vdc
CBO
V
700
Vdc
CES
V
12
Vdc
EBO
I
5
Adc
C
I
10
CM
I
2
Adc
B
I
4
BM
P
75
W
D
0.6
W/_C
T
, T
−65 to 150
_C
J
stg
Symbol
Max
Unit
R
1.65
_C/W
qJC
R
62.5
_C/W
qJA
T
260
_C
L
Device
BUL45D2G
1
http://onsemi.com
POWER TRANSISTOR
5.0 AMPERES,
700 VOLTS, 75 WATTS
TO−220AB
CASE 221A−09
STYLE 1
1
2
3
MARKING DIAGRAM
BUL45D2G
AY WW
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping
TO−220
50 Units / Rail
(Pb−Free)
Publication Order Number:
BUL45D2/D
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BUL45D2G Summary of contents |
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