BUL45D2G ON Semiconductor, BUL45D2G Datasheet

BUL45D2G

Manufacturer Part Number

BUL45D2G

Description

TRANS NPN 5A 700V 75W TO220AB

Manufacturer

ON Semiconductor

Datasheet

1.BUL45D2G.pdf (11 pages)

Specifications of BUL45D2G

Transistor Type

NPN

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

400V

Vce Saturation (max) @ Ib, Ic

500mV @ 400mA, 2A

Current - Collector Cutoff (max)

100µA

Dc Current Gain (hfe) (min) @ Ic, Vce

10 @ 2A, 1V

Power - Max

75W

Frequency - Transition

13MHz

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Transistor Polarity

NPN

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

400 V

Emitter- Base Voltage Vebo

12 V

Maximum Dc Collector Current

5 A

Power Dissipation

75 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

5 A

Dc Collector/base Gain Hfe Min

Maximum Operating Frequency

13 MHz

Minimum Operating Temperature

- 65 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BUL45D2GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

BUL45D2G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 11
Download datasheet (232Kb)

BUL45D2G

High Speed, High Gain

Bipolar NPN Power

Transistor

with Integrated Collector−Emitter Diode

and Built−in Efficient Antisaturation

Network

transistor (H2BIP). High dynamic characteristics and lot−to−lot

minimum spread (±150 ns on storage time) make it ideally suitable for

light ballast applications. Therefore, there is no need to guarantee an h

window. It’s characteristics make it also suitable for PFC application.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

April, 2010 − Rev. 5

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Sustaining Voltage

Collector−Base Breakdown Voltage

Collector−Emitter Breakdown Voltage

Emitter−Base Voltage

Collector Current

Base Current

Total Device Dissipation @ T

Derate above 25°C

Operating and Storage Temperature

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Maximum Lead Temperature for Soldering

Purposes 1/8″ from Case for 5 Seconds

The BUL45D2G is state−of−art High Speed High gain BiPolar

the H2BIP Structure which Minimizes the Spread

Parameter Spreads

Low Base Drive Requirement

High Peak DC Current Gain (55 Typical) @ I

Extremely Low Storage Time Min/Max Guarantees Due to

Integrated Collector−Emitter Free Wheeling Diode

Fully Characterized and Guaranteed Dynamic V

“6 Sigma” Process Providing Tight and Reproductible

These Devices are Pb−Free and are RoHS Compliant*

Characteristics

Rating

− Continuous

− Peak (Note 1)

− Continuous

− Peak (Note 1)

= 25_C

Symbol

CEO

CBO

EBO

, T

CES

qJC

qJA

stg

= 100 mA

−65 to 150

CE(sat)

Value

Max

1.65

62.5

400

700

260

0.6

W/_C

_C/W

Unit

Vdc

Adc

BUL45D2G

Device

POWER TRANSISTOR

700 VOLTS, 75 WATTS

ORDERING INFORMATION

MARKING DIAGRAM

5.0 AMPERES,

http://onsemi.com

(Pb−Free)

Package

BUL45D2G

TO−220

AY WW

= Assembly Location

= Year

= Work Week

= Pb−Free Package

CASE 221A−09

Publication Order Number:

TO−220AB

STYLE 1

50 Units / Rail

Shipping

BUL45D2/D

Related parts for BUL45D2G

BUL45D2G Summary of contents

Page 1

... Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor (H2BIP). High dynamic characteristics and lot−to−lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an h window. It’ ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Characteristic Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...

Page 3

ELECTRICAL CHARACTERISTICS Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Characteristic Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...

Page 4

125° 25° 20° 0.001 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 1. DC Current Gain @ 1 ...

Page 5

25° 20° 125°C J 0.1 0.001 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 7. Base−Emitter Saturation Region ...

Page 6

TYPICAL SWITCHING CHARACTERISTICS 1000 125°C Bon Boff 300 25° 800 600 400 200 0 0.5 1 1.5 ...

Page 7

TYPICAL SWITCHING CHARACTERISTICS 1500 125°C Boff Bon 25° 300 200 mH L 1000 C 500 ...

Page 8

TYPICAL SWITCHING CHARACTERISTICS V CE dyn 1 ms dyn 90 TIME Figure 25. Dynamic Saturation Voltage Measurements ...

Page 9

TYPICAL SWITCHING CHARACTERISTICS + 100 W 150 MPF930 MPF930 + COMMON 150 500 mF -V off 100 0.1 0.01 10 100 ...

Page 10

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I limits of the transistor that must be observed for reliable operation; i.e., the transistor must not ...

Page 11

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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