BUL45D2G ON Semiconductor, BUL45D2G Datasheet - Page 5

• Manufacturer Part Number: BUL45D2G
• Description: TRANS NPN 5A 700V 75W TO220AB
• Manufacturer: ON Semiconductor

Specifications of BUL45D2G

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 400mA, 2A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 2A, 1V
• Power - Max: 75W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 400 V
• Emitter- Base Voltage Vebo: 12 V
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 5 A
• Dc Collector/base Gain Hfe Min: 22
• Maximum Operating Frequency: 13 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BUL45D2GOS

1000
100
0.1
0.1
10
10
10
1
1
1
0.001
0.001
1
I
I
C
Figure 7. Base−Emitter Saturation Region
C
Figure 9. Base−Emitter Saturation Region
/I
/I
B
B
= 5
= 20
0.01
0.01
I
I
T
C
C
V
T
J
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
Figure 11. Capacitance
R
J
= 25°C
, REVERSE VOLTAGE (VOLTS)
T
= 25°C
J
= 125°C
T
J
C
= - 20°C
ib
(pF)
T
J
0.1
0.1
10
= - 20°C
T
J
= 125°C
TYPICAL STATIC CHARACTERISTICS
C
T
f
ob
(test)
1
1
J
= 25°C
(pF)
= 1 MHz
http://onsemi.com
100
10
10
5
1000
900
800
700
600
500
400
0.1
0.1
10
10
1
1
0.001
0.01
10
BVCER(sus) @ 200 mA
Figure 8. Base−Emitter Saturation Region
I
C
REVERSE EMITTER-COLLECTOR CURRENT (AMPS)
/I
B
= 10
Figure 10. Forward Diode Voltage
Figure 12. BVCER = f(ICER)
0.01
I
C
, COLLECTOR CURRENT (AMPS)
0.1
BVCER @ 10 mA
T
J
= 25°C
T
J
= - 20°C
R
BE
0.1
25°C
100
(W)
T
J
= 125°C
1
125°C
1
T
J
= 25°C
1000
10
10