BUL45D2G ON Semiconductor, BUL45D2G Datasheet - Page 8

• Manufacturer Part Number: BUL45D2G
• Description: TRANS NPN 5A 700V 75W TO220AB
• Manufacturer: ON Semiconductor

Specifications of BUL45D2G

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 400mA, 2A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 2A, 1V
• Power - Max: 75W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 400 V
• Emitter- Base Voltage Vebo: 12 V
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 5 A
• Dc Collector/base Gain Hfe Min: 22
• Maximum Operating Frequency: 13 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BUL45D2GOS

0 V
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Figure 25. Dynamic Saturation
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TYPICAL SWITCHING CHARACTERISTICS
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Figure 26. Inductive Switching Measurements
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