MJE13009G ON Semiconductor, MJE13009G Datasheet

TRANS PWR NPN 12A 400V TO220AB

MJE13009G

Manufacturer Part Number
MJE13009G
Description
TRANS PWR NPN 12A 400V TO220AB
Manufacturer
ON Semiconductor
Datasheet

Specifications of MJE13009G

Transistor Type
NPN
Current - Collector (ic) (max)
12A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
3V @ 3A, 12A
Dc Current Gain (hfe) (min) @ Ic, Vce
8 @ 5A, 5V
Power - Max
2W
Frequency - Transition
4MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
400 V
Emitter- Base Voltage Vebo
9 V
Maximum Dc Collector Current
12 A
Power Dissipation
12 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
12 A
Dc Collector/base Gain Hfe Min
8
Maximum Operating Frequency
4 MHz
Minimum Operating Temperature
- 65 C
Number Of Elements
1
Collector-emitter Voltage
400V
Collector-base Voltage
700V
Emitter-base Voltage
9V
Collector Current (dc) (max)
12A
Dc Current Gain (min)
8
Frequency (max)
4MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MJE13009GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJE13009G
Quantity:
1
Part Number:
MJE13009G
Manufacturer:
ON Semiconductor
Quantity:
2
MJE13009G
SWITCHMODEt Series
NPN Silicon Power
Transistors
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 9
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Base Current
Emitter Current
Total Device Dissipation @ T
Derate above 25°C
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
The MJE13009G is designed for high−voltage, high−speed power
100_C is 120 ns (Typ)
V
Reverse Bias SOA with Inductive Loads @ T
Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C t
700 V Blocking Capability
SOA and Switching Applications Information
These Devices are Pb−Free and are RoHS Compliant*
CEO(sus)
400 V and 300 V
Characteristics
Rating
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
A
C
= 25_C
= 25_C
V
Symbol
Symbol
T
CEO(sus)
V
V
R
R
J
I
I
I
P
P
EBO
, T
T
CEV
CM
BM
EM
I
I
I
qJA
qJC
C
B
E
D
D
L
stg
C
= 100_C
−65 to
Value
0.016
+150
Max
62.5
1.25
400
700
100
275
0.8
12
24
12
18
36
9
6
2
c
1
@ 8 A,
W/_C
W/_C
_C/W
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
_C
_C
W
W
MJE13009G
Device
400 VOLTS − 100 WATTS
POWER TRANSISTOR
1
ORDERING INFORMATION
2
A
Y
WW = Work Week
G
3
MARKING DIAGRAM
http://onsemi.com
NPN SILICON
12 AMPERE
= Assembly Location
= Year
= Pb−Free Package
(Pb−Free)
MJE13009G
Package
TO−220
AY WW
CASE 221A−09
Publication Order Number:
TO−220AB
STYLE 1
50 Units / Rail
Shipping
MJE13009/D

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MJE13009G Summary of contents

Page 1

... MJE13009G SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

T = 25° 0.5 THERMAL LIMIT 0.2 BONDING WIRE LIMIT 0.1 SECOND BREAKDOWN LIM­ CURVES APPLY BELOW RATED IT 0.05 V CEO 0.02 0. ...

Page 4

T = 150° 25° 55° 0.5 0 0.2 0 COLLECTOR CURRENT (AMP) C Figure 5. DC Current Gain 1.4 1 ...

Page 5

Table 1. Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING 1N4933 0.001 2N2222 W 1 DUTY CYCLE ≤ 10 ≤ ...

Page 6

... The inductive switching characteristics are derived from the same circuit used to specify the reverse biased SOA curves, (See Table 1) providing correlation between test procedures and actual use conditions. 3. For detailed information on specific switching applications, see ON Semiconductor Application Notes AN−719, AN−767. http://onsemi.com ...

Page 7

RESISTIVE SWITCHING PERFORMANCE 125 V CC 700 25°C 500 J 300 200 t r 100 BE(off) 50 0.2 0.3 0.5 0.7 ...

Page 8

Table 2. Applications Examples of Switching Circuits CIRCUIT SERIES SWITCHING REGULATOR RINGING CHOKE INVERTER PUSH−PULL INVERTER/CONVERTER 24 A ...

Page 9

Table 3. Typical Inductive Switching Performance Î Î Î Î Î Î AMP Î Î Î Î Î Î 3 Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...

Page 10

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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