TRANS NPN 15A 60V TO3

2N3055G

Manufacturer Part Number2N3055G
DescriptionTRANS NPN 15A 60V TO3
ManufacturerON Semiconductor
TypePower
2N3055G datasheets
 


Specifications of 2N3055G

Transistor TypeNPNCurrent - Collector (ic) (max)15A
Voltage - Collector Emitter Breakdown (max)60VVce Saturation (max) @ Ib, Ic3V @ 3.3A, 10A
Current - Collector Cutoff (max)700µADc Current Gain (hfe) (min) @ Ic, Vce20 @ 4A, 4V
Power - Max115WFrequency - Transition2.5MHz
Mounting TypeChassis MountPackage / CaseTO-204, TO-3
Transistor PolarityNPNMounting StyleThrough Hole
Collector- Emitter Voltage Vceo Max60 VEmitter- Base Voltage Vebo7 V
Maximum Dc Collector Current15 APower Dissipation115000 mW
Maximum Operating Temperature+ 200 CDc Collector/base Gain Hfe Min20
Maximum Operating Frequency2.5 MHzMinimum Operating Temperature- 65 C
Current, Collector15 ACurrent, Gain70
Frequency2.5 MHzPackage TypeTO-204AA (TO-3)
PolarityNPNPrimary TypeSi
Resistance, Thermal, Junction To Case1.52 °C/WVoltage, Breakdown, Collector To Emitter60 V
Voltage, Collector To Base100 VVoltage, Collector To Emitter60 V
Voltage, Collector To Emitter, Saturation1.1 VVoltage, Emitter To Base7 V
Number Of Elements1Collector-emitter Voltage60V
Collector-base Voltage100VEmitter-base Voltage7V
Collector Current (dc) (max)15ADc Current Gain (min)20
Frequency (max)2.5MHzOperating Temp Range-65C to 200C
Operating Temperature ClassificationMilitaryMountingThrough Hole
Pin Count2 +TabLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names2N3055GOS  
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2N3055(NPN), MJ2955(PNP)
Preferred Device
Complementary Silicon
Power Transistors
Complementary silicon power transistors are designed for
general−purpose switching and amplifier applications.
Features
DC Current Gain − h
= 20−70 @ I
FE
Collector−Emitter Saturation Voltage −
V
= 1.1 Vdc (Max) @ I
= 4 Adc
CE(sat)
C
Excellent Safe Operating Area
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Power Dissipation @ T
= 25°C
C
Derate Above 25°C
Operating and Storage Junction
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
160
140
120
100
80
60
40
20
0
0
25
50
75
100
T
, CASE TEMPERATURE (°C)
C
Figure 1. Power Derating
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 6
= 4 Adc
C
Symbol
Value
Unit
V
60
Vdc
CEO
V
70
Vdc
CER
V
100
Vdc
CB
V
7
Vdc
EB
I
15
Adc
C
I
7
Adc
B
P
115
W
D
0.657
W/°C
°C
T
, T
− 65 to +200
J
stg
2N3055
2N3055G
125
150
175
200
MJ2955
MJ2955G
Preferred devices are recommended choices for future use
and best overall value.
1
http://onsemi.com
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 VOLTS, 115 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
xxxx55G
AYYWW
MEX
xxxx55
= Device Code
xxxx = 2N30 or MJ20
G
= Pb−Free Package
A
= Location Code
YY
= Year
WW
= Work Week
MEX
= Country of Orgin
ORDERING INFORMATION
Device
Package
Shipping
TO−204AA
100 Units / Tray
TO−204AA
100 Units / Tray
(Pb−Free)
100 Units / Tray
TO−204AA
TO−204AA
100 Units / Tray
(Pb−Free)
Publication Order Number:
2N3055/D

2N3055G Summary of contents

  • Page 1

    ... Adc B P 115 W D 0.657 W/°C ° − +200 J stg 2N3055 2N3055G 125 150 175 200 MJ2955 MJ2955G Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS TO−204AA (TO−3) CASE 1− ...

  • Page 2

    THERMAL CHARACTERISTICS Î Î Î Î Î ...

  • Page 3

    T = 150°C J 200 25°C 100 −55 ° 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3 COLLECTOR CURRENT (AMP) C Figure 3. DC Current Gain, 2N3055 (NPN) 2.0 ...

  • Page 4

    ... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...