2N3055G ON Semiconductor, 2N3055G Datasheet
2N3055G
Manufacturer Part Number
2N3055G
Description
TRANS NPN 15A 60V TO3
Manufacturer
ON Semiconductor
Type
Powerr
Specifications of 2N3055G
Transistor Type
NPN
Current - Collector (ic) (max)
15A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
3V @ 3.3A, 10A
Current - Collector Cutoff (max)
700µA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 4A, 4V
Power - Max
115W
Frequency - Transition
2.5MHz
Mounting Type
Chassis Mount
Package / Case
TO-204, TO-3
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
15 A
Power Dissipation
115000 mW
Maximum Operating Temperature
+ 200 C
Dc Collector/base Gain Hfe Min
20
Maximum Operating Frequency
2.5 MHz
Minimum Operating Temperature
- 65 C
Current, Collector
15 A
Current, Gain
70
Frequency
2.5 MHz
Package Type
TO-204AA (TO-3)
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
1.52 °C/W
Voltage, Breakdown, Collector To Emitter
60 V
Voltage, Collector To Base
100 V
Voltage, Collector To Emitter
60 V
Voltage, Collector To Emitter, Saturation
1.1 V
Voltage, Emitter To Base
7 V
Number Of Elements
1
Collector-emitter Voltage
60V
Collector-base Voltage
100V
Emitter-base Voltage
7V
Collector Current (dc) (max)
15A
Dc Current Gain (min)
20
Frequency (max)
2.5MHz
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
2 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2N3055GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N3055G
Manufacturer:
ON/安森美
Quantity:
20 000
2N3055(NPN), MJ2955(PNP)
Complementary Silicon
Power Transistors
general−purpose switching and amplifier applications.
Features
•
•
•
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 6
MAXIMUM RATINGS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Base Current
Total Power Dissipation @ T
Derate Above 25°C
Operating and Storage Junction
Temperature Range
Collector Current − Continuous
Complementary silicon power transistors are designed for
DC Current Gain − h
Collector−Emitter Saturation Voltage −
Excellent Safe Operating Area
Pb−Free Packages are Available*
V
CE(sat)
160
140
120
100
80
60
40
20
0
0
= 1.1 Vdc (Max) @ I
Rating
25
FE
50
Figure 1. Power Derating
T
= 20−70 @ I
C
Preferred Device
C
, CASE TEMPERATURE (°C)
= 25°C
75
C
100
= 4 Adc
C
Symbol
= 4 Adc
T
V
V
J
V
V
125
P
CEO
CER
, T
I
I
CB
EB
C
B
D
stg
150
− 65 to +200
Value
0.657
100
115
60
70
15
7
7
175
1
200
W/°C
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
°C
W
Preferred devices are recommended choices for future use
and best overall value.
2N3055
2N3055G
MJ2955
MJ2955G
COMPLEMENTARY SILICON
Device
POWER TRANSISTORS
60 VOLTS, 115 WATTS
xxxx55
G
A
YY
WW
MEX
ORDERING INFORMATION
MARKING DIAGRAM
http://onsemi.com
15 AMPERE
TO−204AA
TO−204AA
TO−204AA
TO−204AA
= Device Code
= Pb−Free Package
= Location Code
= Year
= Work Week
= Country of Orgin
(Pb−Free)
(Pb−Free)
Package
xxxx55G
AYYWW
xxxx = 2N30 or MJ20
MEX
Publication Order Number:
TO−204AA (TO−3)
CASE 1−07
STYLE 1
100 Units / Tray
100 Units / Tray
100 Units / Tray
100 Units / Tray
Shipping
2N3055/D
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2N3055G Summary of contents
Page 1
... Adc B P 115 W D 0.657 W/°C ° − +200 J stg 2N3055 2N3055G 125 150 175 200 MJ2955 MJ2955G Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS TO−204AA (TO−3) CASE 1− ...
Page 2
THERMAL CHARACTERISTICS Î Î Î Î Î ...
Page 3
T = 150°C J 200 25°C 100 −55 ° 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3 COLLECTOR CURRENT (AMP) C Figure 3. DC Current Gain, 2N3055 (NPN) 2.0 ...
Page 4
... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...