2N3773G ON Semiconductor, 2N3773G Datasheet

2N3773G

Manufacturer Part Number

2N3773G

Description

TRANS NPN 16A 140V TO3

Manufacturer

ON Semiconductor

Type

Powerr

Datasheets

1.2N3773G.pdf (6 pages)

2.2N3773G.pdf (3 pages)

Specifications of 2N3773G

Transistor Type

NPN

Current - Collector (ic) (max)

16A

Voltage - Collector Emitter Breakdown (max)

140V

Vce Saturation (max) @ Ib, Ic

1.4V @ 800mA, 8A

Current - Collector Cutoff (max)

10mA

Dc Current Gain (hfe) (min) @ Ic, Vce

15 @ 8A, 4V

Power - Max

150W

Mounting Type

Chassis Mount

Package / Case

TO-204, TO-3

Transistor Polarity

PNP

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

140 V

Emitter- Base Voltage Vebo

7 V

Maximum Dc Collector Current

16 A

Power Dissipation

150 W

Continuous Collector Current

16 A

Dc Collector/base Gain Hfe Min

Current, Collector

16 A

Current, Gain

Package Type

TO-204

Polarity

NPN

Primary Type

Resistance, Thermal, Junction To Case

1.17 °C/W

Voltage, Breakdown, Collector To Emitter

140 V

Voltage, Collector To Base

160 V

Voltage, Collector To Emitter

140 V

Voltage, Collector To Emitter, Saturation

4 V

Voltage, Emitter To Base

7 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Frequency - Transition

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

2N3773GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2N3773G

Manufacturer:

ON Semiconductor

Quantity:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2N3773G

Manufacturer:

ONSEMICON

Quantity:

736

Company:

BOSTOCK HK LIMITED

Part Number:

2N3773G

Manufacturer:

FAIRCHIL

Quantity:

Company:

Meier Automation Equipment Co., Limited

Part Number:

2N3773G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 6
Download datasheet (94Kb)

NPN 2N3773*, PNP 2N6609

Complementary Silicon

Power Transistors

designed for high power audio, disk head positioners and other linear

applications. These devices can also be used in power switching

circuits such as relay or solenoid drivers, DC−DC converters or

inverters.

Features

1. Indicates JEDEC Registered Data.

2. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

**For additional information on our Pb−Free strategy and soldering details,

July, 2004 − Rev. 10

MAXIMUM RATINGS

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

THERMAL CHARACTERISTICS

please download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector − Emitter Voltage

Collector − Base Voltage

Emitter − Base Voltage

Collector Current

Base Current

Total Power Dissipation @ T

Operating and Storage Junction

Thermal Resistance,

The 2N3773 and 2N6609 are PowerBaset power transistors

Pb−Free Packages are Available**

High Safe Operating Area (100% Tested) 150 W @ 100 V

Completely Characterized for Linear Operation

High DC Current Gain and Low Saturation Voltage

For Low Distortion Complementary Designs

Semiconductor Components Industries, LLC, 2004

Derate above 25 C

Temperature Range

Junction−to−Case

Characteristic

CE(sat)

− Continuous

− Peak (Note 2)

= 15 (Min) @ 8.0 A, 4.0 V

Rating

− Continuous

− Peak (Note 2)

= 1.4 V (Max) @ I

(Note 1)

Preferred Device

= 25 C

Symbol

qJC

Symbol

= 8.0 A, I

, T

CEO

CEX

CBO

EBO

stg

Max

1.17

−65 to +200

Value

0.855

= 0.8 A

140

160

150

Unit

C/W

W/ C

Unit

Vdc

Adc

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

*Preferred devices are recommended choices for future

use and best overall value.

16 A COMPLEMENTARY

POWER TRANSISTORS

CASE 1−07

TO−204

ORDERING INFORMATION

xxxx

http://onsemi.com

140 V, 150 W

= 3773 or 6609

= Assembly Location

= Year

= Work Week

Publication Order Number:

MARKING

DIAGRAM

AYYWW

2Nxxxx

MEX

2N3773/D

Related parts for 2N3773G

2N3773G Summary of contents

Page 1

... THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, R qJC Junction−to−Case **For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2004 July, 2004 − Rev 8 0 Symbol ...

Page 2

... Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%. 4. Indicates JEDEC Registered Data. ORDERING INFORMATION Device 2N3773 2N3773G 2N6609 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi- cations Brochure, BRD8011/D. NPN 2N3773*, PNP 2N6609 ...

Page 3

NPN 300 150 C 200 100 − 7.0 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3 COLLECTOR CURRENT (AMPS) C Figure 1. DC Current Gain ...

Page 4

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I limits of ...

Page 5

NPN 2N3773*, PNP 2N6609 PACKAGE DIMENSIONS SEATING −T− PLANE 0.13 (0.005 −Y− −Q− 0.13 (0.005 TO−204 ...

Page 6

... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NPN 2N3773*, PNP 2N6609 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: http://onsemi ...

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