2N5684G | |
|---|---|
| Manufacturer Part Number | 2N5684G |
| Description | TRANS PNP PWR GP 50A 80V TO3 |
| Manufacturer | ON Semiconductor |
| Type | High Current, Power |
| 2N5684G datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
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Specifications of 2N5684G | |||
|---|---|---|---|
| Transistor Type | PNP | Current - Collector (ic) (max) | 50A |
| Voltage - Collector Emitter Breakdown (max) | 80V | Vce Saturation (max) @ Ib, Ic | 5V @ 10A, 50A |
| Current - Collector Cutoff (max) | 1mA | Dc Current Gain (hfe) (min) @ Ic, Vce | 15 @ 25A, 2V |
| Power - Max | 300mW | Frequency - Transition | 2MHz |
| Mounting Type | Chassis Mount | Package / Case | TO-204, TO-3 |
| Transistor Polarity | PNP | Mounting Style | Through Hole |
| Collector- Emitter Voltage Vceo Max | 80 V | Emitter- Base Voltage Vebo | 5 V |
| Maximum Dc Collector Current | 50 A | Power Dissipation | 300 W |
| Maximum Operating Temperature | + 200 C | Continuous Collector Current | 50 A |
| Dc Collector/base Gain Hfe Min | 15 | Maximum Operating Frequency | 2 MHz |
| Minimum Operating Temperature | - 65 C | Current, Collector | 50 A |
| Current, Gain | 5 | Frequency | 2 MHz |
| Package Type | TO-204 (TO-3) | Polarity | PNP |
| Primary Type | Si | Resistance, Thermal, Junction To Case | 0.584 °C/W |
| Voltage, Breakdown, Collector To Emitter | 80 V | Voltage, Collector To Base | 80 V |
| Voltage, Collector To Emitter | 80 V | Voltage, Collector To Emitter, Saturation | 5 V |
| Voltage, Emitter To Base | 5 V | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Other names | 2N5684GOS | ||
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2N5684 (PNP), 2N5686 (NPN)
High-Current
Complementary Silicon
Power Transistors
These packages are designed for use in high-power amplifier and
switching circuit applications.
Features
•
High Current Capability - I
Continuous = 50 Amperes
C
•
DC Current Gain - h
= 15-60 @ I
FE
•
Low Collector-Emitter Saturation Voltage -
V
= 1.0 Vdc (Max) @ I
= 25 Adc
CE(sat)
C
•
Pb-Free Packages are Available*
MAXIMUM RATINGS
(Note 1)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Base Current
Total Power Dissipation @ T
= 25°C
C
Derate above 25°C
Operating and Storage Temperature
Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction-to-Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
300
250
200
150
100
50
0
0
20
40
60
80
100
TEMPERATURE (°C)
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
© Semiconductor Components Industries, LLC, 2007
October, 2007 - Rev. 12
= 25 Adc
C
Symbol
Value
Unit
V
80
Vdc
CEO
V
80
Vdc
CB
V
5.0
Vdc
EB
I
50
Adc
C
I
15
Adc
B
P
300
mW
D
1.715
mW/°C
°C
T
, T
- 65 to + 200
J
stg
Symbol
Max
Unit
°C/W
0.584
qJC
120 140
160
180
200
1
http://onsemi.com
50 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60-80 VOLTS, 300 WATTS
MARKING
DIAGRAM
2N568xG
AYYWW
MEX
TO-204 (TO-3)
CASE 197A
STYLE 1
2N568x
= Device Code
x = 4 or 6
G
= Pb-Free Package
A
= Location Code
YY
= Year
WW
= Work Week
MEX
= Country of Orgin
ORDERING INFORMATION
Device
Package
Shipping
2N5684G
TO-3
100 Units/Tray
(Pb-Free)
2N5686
TO-3
100 Units/Tray
2N5686G
TO-3
100 Units/Tray
(Pb-Free)
*For additional information on our Pb-Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Publication Order Number:
2N5684/D
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2N5684G Summary of contents |
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