BUL310 STMicroelectronics, BUL310 Datasheet

TRANSISTOR POWER NPN TO-220

BUL310

Manufacturer Part Number
BUL310
Description
TRANSISTOR POWER NPN TO-220
Manufacturer
STMicroelectronics
Datasheet

Specifications of BUL310

Transistor Type
NPN
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
500V
Vce Saturation (max) @ Ib, Ic
1.1V @ 600mA, 3A
Current - Collector Cutoff (max)
250µA
Dc Current Gain (hfe) (min) @ Ic, Vce
6 @ 3A, 2.5V
Power - Max
75W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
500V
Power Dissipation Pd
75W
Dc Collector Current
3A
Dc Current Gain Hfe
10
Transistor Case Style
TO-220
No. Of Pins
3
Svhc
No SVHC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
497-7201-5
BUL310

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APPLICATIONS
DESCRIPTION
The device is manufactured using high voltage
Multi
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
February 2002
Symbol
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERISED AT 125
LARGE RBSOA
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
V
V
V
P
T
I
I
CEO
EBO
CES
I
CM
I
BM
T
stg
C
B
tot
j
Epitaxial Planar technology for high
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at Tc = 25
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
p
<5 ms)
C
p
= 0)
<5 ms)
o
B
C
BE
o
= 0)
C
HIGH VOLTAGE FAST-SWITCHING
= 0)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
1000
500
150
10
75
TO-220
9
5
3
4
1
2
BUL310
3
Unit
o
o
W
V
V
V
V
A
A
A
C
C
1/6

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BUL310 Summary of contents

Page 1

... Base Current B I Base Peak Current ( Total Dissipation tot T Storage Temperature stg T Max. Operating Junction Temperature j February 2002 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR o C INTERNAL SCHEMATIC DIAGRAM = <5 ms) p <5 ms BUL310 TO-220 Value Unit 1000 V 500 -65 to 150 C o 150 C 1/6 ...

Page 2

... BUL310 THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEO Current ( Collector-Emitter CEO(sus) Sustaining Voltage ( Emitter-Base Voltage EBO ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain ...

Page 3

... DC Current Gain Collector Emitter Saturation Voltage Inductive Load Fall Time DC Current Gain Base Emitter Saturation Voltage Inductive Load Storage Time BUL310 3/6 ...

Page 4

... BUL310 Reverse Biased SOA Figure 1: Inductive Load Switching Test Circuit (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/6 ...

Page 5

... BUL310 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.102 ...

Page 6

... BUL310 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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