TRANSISTOR POWER NPN TO-220

BUL310

Manufacturer Part NumberBUL310
DescriptionTRANSISTOR POWER NPN TO-220
ManufacturerSTMicroelectronics
BUL310 datasheet
 


Specifications of BUL310

Transistor TypeNPNCurrent - Collector (ic) (max)5A
Voltage - Collector Emitter Breakdown (max)500VVce Saturation (max) @ Ib, Ic1.1V @ 600mA, 3A
Current - Collector Cutoff (max)250µADc Current Gain (hfe) (min) @ Ic, Vce6 @ 3A, 2.5V
Power - Max75WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo500VPower Dissipation Pd75W
Dc Collector Current3ADc Current Gain Hfe10
Transistor Case StyleTO-220No. Of Pins3
SvhcNo SVHCRohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS CompliantFrequency - Transition-
Other names497-7201-5
BUL310
  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
Page 1/6

Download datasheet (203Kb)Embed
Next
®
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERISED AT 125
LARGE RBSOA
APPLICATIONS
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi
Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
Collector-Emitter Voltage (V
CES
V
Collector-Emitter Voltage (I
CEO
V
Emitter-Base Voltage (I
EBO
I
Collector Current
C
I
Collector Peak Current (t
CM
I
Base Current
B
I
Base Peak Current (t
BM
P
Total Dissipation at Tc = 25
tot
T
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
February 2002
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
o
C
INTERNAL SCHEMATIC DIAGRAM
= 0)
BE
= 0)
B
= 0)
C
<5 ms)
p
<5 ms)
p
o
C
BUL310
3
2
1
TO-220
Value
Unit
1000
V
500
V
9
V
5
V
10
A
3
A
4
A
75
W
o
-65 to 150
C
o
150
C
1/6

BUL310 Summary of contents

  • Page 1

    ... Base Current B I Base Peak Current ( Total Dissipation tot T Storage Temperature stg T Max. Operating Junction Temperature j February 2002 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR o C INTERNAL SCHEMATIC DIAGRAM = <5 ms) p <5 ms BUL310 TO-220 Value Unit 1000 V 500 -65 to 150 C o 150 C 1/6 ...

  • Page 2

    ... BUL310 THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEO Current ( Collector-Emitter CEO(sus) Sustaining Voltage ( Emitter-Base Voltage EBO ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain ...

  • Page 3

    ... DC Current Gain Collector Emitter Saturation Voltage Inductive Load Fall Time DC Current Gain Base Emitter Saturation Voltage Inductive Load Storage Time BUL310 3/6 ...

  • Page 4

    ... BUL310 Reverse Biased SOA Figure 1: Inductive Load Switching Test Circuit (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/6 ...

  • Page 5

    ... BUL310 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.102 ...

  • Page 6

    ... BUL310 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...