PBSS302PX,115 NXP Semiconductors, PBSS302PX,115 Datasheet - Page 4

TRANS PNP 20V 5.1A SOT-89

PBSS302PX,115

Manufacturer Part Number
PBSS302PX,115
Description
TRANS PNP 20V 5.1A SOT-89
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS302PX,115

Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Type
PNP
Current - Collector (ic) (max)
5.1A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
230mV @ 255mA, 5.1A
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2A, 2V
Power - Max
2.1W
Frequency - Transition
130MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
5.1 A
Power Dissipation
2100 mW
Maximum Operating Frequency
130 MHz (Typ)
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4174-2
934059015115
PBSS302PX T/R
PBSS302PX T/R
NXP Semiconductors
6. Thermal characteristics
PBSS302PX_2
Product data sheet
Fig 2.
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−5
δ = 1
0.50
0.20
0.10
0.05
0.02
0.01
0
0.75
0.33
10
−4
Table 6.
[1]
[2]
[3]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
10
−3
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Thermal characteristics
10
Rev. 02 — 20 November 2009
−2
10
−1
2
O
3
, standard footprint.
Conditions
in free air
20 V, 5.1 A PNP low V
1
10
[1]
[2]
[3]
Min
-
-
-
-
PBSS302PX
CEsat
10
Typ
-
-
-
-
2
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
p
006aaa557
(s)
Max
208
76
60
20
10
3
2
.
Unit
K/W
K/W
K/W
K/W
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