PBSS302PX,115 NXP Semiconductors, PBSS302PX,115 Datasheet - Page 5

• Manufacturer Part Number: PBSS302PX,115
• Description: TRANS PNP 20V 5.1A SOT-89
• Manufacturer: NXP Semiconductors

Specifications of PBSS302PX,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: PNP
• Current - Collector (ic) (max): 5.1A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 230mV @ 255mA, 5.1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2A, 2V
• Power - Max: 2.1W
• Frequency - Transition: 130MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 5.1 A
• Power Dissipation: 2100 mW
• Maximum Operating Frequency: 130 MHz (Typ)
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4174-2; 934059015115; PBSS302PX T/R; PBSS302PX T/R

NXP Semiconductors
PBSS302PX_2
Product data sheet
Fig 3.
Fig 4.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
−1
−1
1
1
2
10
2
10
FR4 PCB, mounting pad for collector 6 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Ceramic PCB, Al
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−5
−5
δ = 1
0.50
0.20
0.10
0.05
0.02
0.01
δ = 1
0.50
0.20
0.10
0.05
0.02
0.01
0
0
0.75
0.33
0.75
0.33
10
10
−4
−4
2
O
3
, standard footprint
10
10
−3
−3
10
10
2
Rev. 02 — 20 November 2009
−2
−2
10
10
−1
−1
20 V, 5.1 A PNP low V
1
1
10
10
PBSS302PX
CEsat
10
10
2
2
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
t
p
p
006aaa558
006aaa559
(s)
(s)
10
10
3
3
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