PBSS302PX,115 NXP Semiconductors, PBSS302PX,115 Datasheet - Page 3

TRANS PNP 20V 5.1A SOT-89

PBSS302PX,115

Manufacturer Part Number
PBSS302PX,115
Description
TRANS PNP 20V 5.1A SOT-89
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS302PX,115

Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Type
PNP
Current - Collector (ic) (max)
5.1A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
230mV @ 255mA, 5.1A
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2A, 2V
Power - Max
2.1W
Frequency - Transition
130MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
5.1 A
Power Dissipation
2100 mW
Maximum Operating Frequency
130 MHz (Typ)
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4174-2
934059015115
PBSS302PX T/R
PBSS302PX T/R
NXP Semiconductors
5. Limiting values
PBSS302PX_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
V
V
V
I
I
P
T
T
T
C
CM
Fig 1.
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, standard footprint
Power derating curves
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
junction temperature
ambient temperature
storage temperature
Rev. 02 — 20 November 2009
P
(W)
tot
2
2.5
2.0
1.5
1.0
0.5
O
0
3
−75
, standard footprint
(1)
(2)
(3)
−25
2
O
3
Conditions
open emitter
open base
open collector
single pulse;
t
T
, standard footprint.
p
amb
≤ 1 ms
25
≤ 25 °C
20 V, 5.1 A PNP low V
2
75
125
T
006aaa556
amb
[1]
[2]
[3]
(°C)
175
Min
-
-
-
-
-
-
-
-
-
−65
−65
PBSS302PX
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
−20
−20
−5
−5.1
−10.2
0.6
1.65
2.1
150
+150
+150
Unit
V
V
V
A
A
W
W
W
°C
°C
°C
2
.
3 of 15

Related parts for PBSS302PX,115