PBSS302PX,115 NXP Semiconductors, PBSS302PX,115 Datasheet - Page 7

• Manufacturer Part Number: PBSS302PX,115
• Description: TRANS PNP 20V 5.1A SOT-89
• Manufacturer: NXP Semiconductors

Specifications of PBSS302PX,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: PNP
• Current - Collector (ic) (max): 5.1A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 230mV @ 255mA, 5.1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2A, 2V
• Power - Max: 2.1W
• Frequency - Transition: 130MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 5.1 A
• Power Dissipation: 2100 mW
• Maximum Operating Frequency: 130 MHz (Typ)
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4174-2; 934059015115; PBSS302PX T/R; PBSS302PX T/R

NXP Semiconductors
PBSS302PX_2
Product data sheet
Fig 5.
Fig 7.
V
h
(V)
1000
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
−1.2
BE
−0.8
−0.4
800
600
400
200
−10
−10
0
0
V
DC current gain as a function of collector
current; typical values
V
Base-emitter voltage as a function of collector
current; typical values
−1
−1
CE
amb
amb
amb
CE
amb
amb
amb
(1)
(2)
(3)
(1)
(2)
(3)
= −2 V
= −2 V
= 100 °C
= 25 °C
= −55 °C
= −55 °C
= 25 °C
= 100 °C
−1
−1
−10
−10
−10
−10
2
2
−10
−10
006aaa596
006aaa597
3
I
3
I
C
C
(mA)
(mA)
Rev. 02 — 20 November 2009
−10
−10
4
4
Fig 6.
Fig 8.
V
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
−1.2
−0.8
−0.4
C
−14
−12
−10
−8
−6
−4
−2
−10
0
0
0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
20 V, 5.1 A PNP low V
C
−1
amb
amb
amb
amb
/I
(1)
(2)
(3)
B
= 20
= 25 °C
= −55 °C
= 25 °C
= 100 °C
−1
−1
−10
−2
−10
PBSS302PX
−3
2
CEsat
IB (mA) = −100
−10
© NXP B.V. 2009. All rights reserved.
−4
(BISS) transistor
006aaa602
006aaa600
V
3
I
C
CE
(mA)
−
−
−
−
−
−
−
−
−
(V)
90
80
70
60
50
40
30
20
10
−10
−5
4
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