PBSS302NX,115 NXP Semiconductors, PBSS302NX,115 Datasheet - Page 5

TRANS NPN 20V 5.3A SOT-89

PBSS302NX,115

Manufacturer Part Number
PBSS302NX,115
Description
TRANS NPN 20V 5.3A SOT-89
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS302NX,115

Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Type
NPN
Current - Collector (ic) (max)
5.3A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
200mV @ 265mA, 5.3A
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 2A, 2V
Power - Max
2.1W
Frequency - Transition
140MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
5.3 A
Power Dissipation
2100 mW
Maximum Operating Frequency
140 MHz (Typ)
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4173-2
934059008115
PBSS302NX T/R
PBSS302NX T/R
NXP Semiconductors
PBSS302NX_2
Product data sheet
Fig 3.
Fig 4.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
−1
−1
1
1
2
10
2
10
FR4 PCB, mounting pad for collector 6 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Ceramic PCB, Al
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−5
−5
δ = 1
0.50
0.20
0.10
0.05
0.02
0.01
δ = 1
0.50
0.20
0.10
0.05
0.02
0.01
0
0
0.75
0.33
0.75
0.33
10
10
−4
−4
2
O
3
, standard footprint
10
10
−3
−3
10
10
2
Rev. 02 — 20 November 2009
−2
−2
10
10
−1
−1
20 V, 5.3 A NPN low V
1
1
10
10
PBSS302NX
CEsat
10
10
2
2
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
t
p
p
006aaa558
006aaa559
(s)
(s)
10
10
3
3
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