PBSS302NX,115 NXP Semiconductors, PBSS302NX,115 Datasheet - Page 8

TRANS NPN 20V 5.3A SOT-89

PBSS302NX,115

Manufacturer Part Number
PBSS302NX,115
Description
TRANS NPN 20V 5.3A SOT-89
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS302NX,115

Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Type
NPN
Current - Collector (ic) (max)
5.3A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
200mV @ 265mA, 5.3A
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 2A, 2V
Power - Max
2.1W
Frequency - Transition
140MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
5.3 A
Power Dissipation
2100 mW
Maximum Operating Frequency
140 MHz (Typ)
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4173-2
934059008115
PBSS302NX T/R
PBSS302NX T/R
NXP Semiconductors
PBSS302NX_2
Product data sheet
Fig 9.
Fig 11. Collector-emitter saturation resistance as a
V
R
CEsat
CEsat
(V)
(Ω)
10
10
10
(1) T
(2) T
(3) T
10
10
(1) T
(2) T
(3) T
10
10
10
−1
−2
−3
−1
−2
1
3
2
1
10
10
I
Collector-emitter saturation voltage as a
function of collector current; typical values
I
function of collector current; typical values
−1
C
−1
C
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 20
= 20
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
1
1
10
10
10
10
2
2
(1)
(2)
(3)
10
10
(1)
(2)
(3)
006aaa574
3
006aaa577
3
I
I
C
C
(mA)
(mA)
Rev. 02 — 20 November 2009
10
10
4
4
Fig 10. Collector-emitter saturation voltage as a
Fig 12. Collector-emitter saturation resistance as a
R
V
CEsat
CEsat
(Ω)
(V)
10
10
10
(1) I
(2) I
(3) I
10
10
(1) I
(2) I
(3) I
10
10
10
−1
−2
−3
−1
−2
1
1
10
3
2
10
T
function of collector current; typical values
T
function of collector current; typical values
20 V, 5.3 A NPN low V
−1
C
C
C
−1
C
C
C
amb
amb
/I
/I
/I
/I
/I
/I
(1)
(2)
(3)
B
B
B
B
B
B
(1)
(3)
= 100
= 50
= 10
= 100
= 50
= 10
= 25 °C
= 25 °C
(2)
1
1
10
10
PBSS302NX
10
10
2
2
CEsat
© NXP B.V. 2009. All rights reserved.
10
10
(BISS) transistor
006aaa575
006aaa579
3
3
I
I
C
C
(mA)
(mA)
10
10
4
4
8 of 15

Related parts for PBSS302NX,115