BC856ALT1G ON Semiconductor, BC856ALT1G Datasheet

TRANS PNP LP 100MA 65V SOT23

BC856ALT1G

Manufacturer Part Number
BC856ALT1G
Description
TRANS PNP LP 100MA 65V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC856ALT1G

Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
65V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
125 @ 2mA, 5V
Power - Max
225mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 65 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
- 0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
225 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
125 at 2 mA at 5 V
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
65V
Collector-base Voltage
80V
Emitter-base Voltage
5V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
125
Frequency (max)
100MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BC856ALT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC856ALT1G
Manufacturer:
ON Semiconductor
Quantity:
44 360
Part Number:
BC856ALT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BC856ALT1G
Manufacturer:
ON/安森美
Quantity:
20 000
BC856ALT1G Series
General Purpose
Transistors
PNP Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 11
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board,
Thermal Resistance,
Total Device Dissipation Alumina
Thermal Resistance,
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) T
Derate above 25°C
Junction−to−Ambient
Substrate, (Note 2) T
Derate above 25°C
Junction−to−Ambient
Characteristic
A
= 25°C
Rating
BC858, BC859
BC858, BC859
A
(T
= 25°C
A
= 25°C unless otherwise noted)
BC856
BC857
BC856
BC857
Symbol
Symbol
T
V
V
V
R
R
J
P
P
, T
CEO
CBO
EBO
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
−100
−5.0
Max
−65
−45
−30
−80
−50
−30
225
556
300
417
1.8
2.4
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
mW
mW
°C
V
V
V
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ORDERING INFORMATION
xx
M
G
BASE
MARKING DIAGRAM
1
http://onsemi.com
SOT−23 (TO−236AB)
= Device Code
= Date Code*
= Pb−Free Package
1
xx = (Refer to page 6)
1
CASE 318
STYLE 6
COLLECTOR
xx M G
2
Publication Order Number:
EMITTER
G
3
2
3
BC856ALT1/D

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BC856ALT1G Summary of contents

Page 1

... BC856ALT1G Series General Purpose Transistors PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T = 25°C unless otherwise noted) A Rating Collector-Emitter Voltage BC856 BC857 BC858, BC859 Collector-Base Voltage BC856 BC857 BC858, BC859 Emitter−Base Voltage Collector Current − ...

Page 2

ELECTRICAL CHARACTERISTICS (T Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −10 mA) C Collector −Emitter Breakdown Voltage (I = −10 mA Collector −Base Breakdown Voltage (I = −10 mA) C Emitter−Base Breakdown Voltage ...

Page 3

V = - 25°C A 1.0 0.7 0.5 0.3 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 - COLLECTOR CURRENT (mAdc) C Figure 1. Normalized DC Current Gain -2.0 -1.6 -1 ...

Page 4

25°C A 2.0 1.0 0.5 0.2 -0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 I , COLLECTOR CURRENT (mA) C Figure 7. DC Current Gain -2.0 -1 -20 mA -50 ...

Page 5

D = 0.5 0.5 0.2 0.3 0.2 SINGLE PULSE 0.05 0.1 0.1 SINGLE PULSE 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 -200 1 s -100 T = 25° 25° -50 BC558, ...

Page 6

... ORDERING INFORMATION Device BC856ALT1G BC856ALT3G BC856BLT1G BC856BLT3G BC857ALT1G BC857BLT1G BC857BLT3G BC857CLT1G BC857CLT3G BC858ALT1G BC858BLT1G BC858BLT3G BC858CLT1G BC858CLT3G BC859BLT1G BC859BLT3G BC859CLT1G BC859CLT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 7

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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