BUJ403A,127 NXP Semiconductors, BUJ403A,127 Datasheet

TRANS NPN DIFF 1200V 6A TO-220AB

BUJ403A,127

Manufacturer Part Number
BUJ403A,127
Description
TRANS NPN DIFF 1200V 6A TO-220AB
Manufacturer
NXP Semiconductors
Series
-r
Datasheets

Specifications of BUJ403A,127

Package / Case
TO-220AB-3
Transistor Type
NPN
Current - Collector (ic) (max)
6A
Voltage - Collector Emitter Breakdown (max)
550V
Vce Saturation (max) @ Ib, Ic
1V @ 400mA, 2A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 500mA, 5V
Power - Max
100W
Mounting Type
Through Hole
Continuous Collector Current
6 A
Dc Collector/base Gain Hfe Min
13
Minimum Operating Temperature
- 65 C
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
550 V
Emitter- Base Voltage Vebo
1200 V
Maximum Dc Collector Current
10 A
Power Dissipation
100 W
Maximum Operating Temperature
+ 150 C
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934054660127
Philips Semiconductors
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
December 1998
Silicon Diffused Power Transistor
SYMBOL
V
V
V
I
I
P
V
h
t
SYMBOL
V
V
V
I
I
I
I
P
T
T
SYMBOL
R
R
C
CM
f
C
CM
B
BM
PIN
FEsat
stg
j
CESM
CBO
CEO
tot
CEsat
tab
CESM
CEO
CBO
tot
th j-mb
th j-a
1
2
3
base
collector
emitter
collector
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
DC current gain
Fall time
PARAMETER
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to mounting base
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
tab
CONDITIONS
V
T
I
I
I
CONDITIONS
V
T
CONDITIONS
in free air
C
C
C
1 2 3
mb
mb
1
BE
BE
=2.5 A; I
= 2 A; I
= 3 A; V
= 0 V
= 0 V
25 ˚C
25 ˚C
B
B1
CE
= 0.4 A
=0.5 A
= 5 V
SYMBOL
b
TYP.
TYP.
MIN.
0.15
15.5
Product specification
170
-65
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
1200
e
1200
1200
c
1200
1.25
550
100
300
550
100
150
150
BUJ403A
1.0
10
10
6
6
3
5
-
-
Rev 1.200
UNIT
UNIT
UNIT
K/W
K/W
ns
˚C
˚C
W
W
V
V
V
A
A
V
V
V
V
A
A
A
A

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BUJ403A,127 Summary of contents

Page 1

Philips Semiconductors Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL ...

Page 2

Philips Semiconductors Silicon Diffused Power Transistor STATIC CHARACTERISTICS ˚C unless otherwise specified mb SYMBOL PARAMETER I ,I Collector cut-off current CES CBO I CES I Collector cut-off current CEO I Emitter cut-off current EBO V Collector-emitter sustaining ...

Page 3

Philips Semiconductors Silicon Diffused Power Transistor 300R 6V 30-60 Hz Fig.1. Test circuit for 250 200 100 0 VCE / V Fig.2. Oscilloscope display for V VIM Fig .3. Test circuit ...

Page 4

Philips Semiconductors Silicon Diffused Power Transistor Normalised Power Derating PD% 120 110 100 Tmb / C Fig.7. Normalised power dissipation. PD% = 100 PD/PD 25˚C ...

Page 5

Philips Semiconductors Silicon Diffused Power Transistor IC ( 200 400 600 800 VCEclamp (V) Fig.13. Reverse bias safe operating area T December 1998 IBon -VBB 1,000 1,200 ...

Page 6

Philips Semiconductors Silicon Diffused Power Transistor MECHANICAL DATA Dimensions in mm Net Mass 3,0 max not tinned Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". December 1998 10,3 max 3,7 ...

Page 7

Philips Semiconductors Silicon Diffused Power Transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This ...

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