PXT2907A,115 NXP Semiconductors, PXT2907A,115 Datasheet
PXT2907A,115
Specifications of PXT2907A,115
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PXT2907A T/R
PXT2907A T/R
PXT2907A,115
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PXT2907A,115 Summary of contents
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DATA SHEET dbook, halfpage PXT2907A PNP switching transistor Product data sheet Supersedes data of 2002 Mar 20 DISCRETE SEMICONDUCTORS M3D109 2004 Dec 09 ...
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... NXP Semiconductors PNP switching transistor FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification. DESCRIPTION PNP switching transistor in a SOT89 plastic package. NPN complement: PXT2222A. MARKING TYPE NUMBER PXT2907A *2F Note Made in Hong Kong. ...
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... NXP Semiconductors PNP switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation tot ...
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... NXP Semiconductors PNP switching transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to th(j-a) ambient R thermal resistance from junction to th(j-s) soldering point Notes 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector ...
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... NXP Semiconductors PNP switching transistor (K/W) ( (2) (3) (4) (5) (6) (7) 10 (8) (9) (10) 1 −5 − Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm (1) δ (3) δ = 0.5. (2) δ = 0.75. (4) δ = 0.33. Fig.4 Transient thermal impedance as a function of pulse time; typical values (K/W) ( (2) (3) ...
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... NXP Semiconductors PNP switching transistor CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage V base-emitter saturation voltage BEsat C collector capacitance c C emitter capacitance e f transition frequency T Switching times (between 10% and 90% levels) ...
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... NXP Semiconductors PNP switching transistor handbook, full pagewidth = −9 500 µ µ Ω 325 Ω 325 Ω −29 3 Ω. Oscilloscope input impedance Z i 2004 Dec (probe) oscilloscope 450 Ω ≤ 160 Ω. C Fig.6 Test circuit for switching times (probe) oscilloscope 450 Ω ...
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... NXP Semiconductors PNP switching transistor PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads w M DIMENSIONS (mm are the original dimensions) UNIT 1.6 0.48 0.53 1.8 mm 1.4 0.35 0.40 1.4 OUTLINE VERSION IEC SOT89 2004 Dec scale 0.44 4.6 2 ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...