PXT2907A,115 NXP Semiconductors, PXT2907A,115 Datasheet - Page 3

• Manufacturer Part Number: PXT2907A,115
• Description: TRANS PNP 60V 600MA SOT89
• Manufacturer: NXP Semiconductors

Specifications of PXT2907A,115

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 1.1W
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 568-5042-2; 933821830115; PXT2907A T/R; PXT2907A T/R; PXT2907A,115

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm
2004 Dec 09
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
PNP switching transistor
(1) FR4 PCB; 6 cm
(2) FR4 PCB; 1 cm
(3) FR4 PCB; standard footprint.
(mW)
P
1600
1200
tot
800
400
0
−75
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
Fig.2 Power derating curves.
−25
(1)
(2)
(3)
2
2
mounting pad for collector.
mounting pad for collector.
25
PARAMETER
75
125
T
006aaa238
amb
(°C)
175
open emitter
open base
open collector
T
amb
note 1
note 2
note 3
3
≤ 25 °C
CONDITIONS
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
−60
−60
−5
−600
−800
−200
0.5
0.8
1.1
+150
150
+150
Product data sheet
PXT2907A
MAX.
V
V
V
mA
mA
mA
W
W
W
°C
°C
°C
UNIT
2
2
.
.