MAX2643EXT+T Maxim Integrated Products, MAX2643EXT+T Datasheet

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MAX2643EXT+T

Manufacturer Part Number
MAX2643EXT+T
Description
RF Amplifier SiGe, High IP3, LNA with Shutdown, Adjus
Manufacturer
Maxim Integrated Products
Type
General Purpose Amplifierr
Datasheet

Specifications of MAX2643EXT+T

Operating Frequency
900 MHz
P1db
- 18 dBm
Noise Figure
1.35 dB at 900 MHz
Operating Supply Voltage
3 V, 5 V
Supply Current
6.5 mA
Maximum Power Dissipation
245 mW
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Number Of Channels
1 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
The MAX2642/MAX2643 low-cost, high third-order inter-
cept point (IP3), low-noise amplifiers (LNAs) are
designed for applications in cellular, ISM, SMR, and
PMR systems. They feature a programmable bias,
allowing the IP3 and supply current to be optimized for
specific applications. These LNAs provide up to 0dBm
input IP3 while maintaining a low noise figure of 1.3dB.
The gain for these devices is typically 17dB. The
MAX2642 also features a 13dB attenuation step, which
extends the LNA’s dynamic range. Both devices feature
a shutdown mode that minimizes power consumption.
On-chip output matching saves board space by reduc-
ing the number of external components.
The MAX2642/MAX2643 are designed on a low-noise,
advanced silicon-germanium (SiGe) process technolo-
gy. They operate from a +2.7V to +5.5V single supply
and are available in the ultra-small 6-pin SC70 package.
For free samples and the latest literature, visit www.maxim-ic.com or phone 1-800-998-8800.
For small orders, phone 1-800-835-8769.
19-1682; Rev 0; 4/00
________________________Applications
INPUT
RF
800MHz/900MHz Cellular Phones
900MHz Cordless Phones
868MHz/900MHz ISM-Band Wireless Data
PMR/SMR/LMR
C1
3.3pF
8.7nH
Typical Operating Circuit
L1
510Ω
R
BIAS
________________________________________________________________ Maxim Integrated Products
BIAS
RFIN
47pF
General Description
GND
V
BIAS
CC
V
CC
RFOUT
LOW GAIN
(ENABLE)
( ) ARE FOR MAX2643.
HIGH GAIN
(SHUTDOWN)
MAX2642
MAX2643
33k
(10k)
RF
OUTPUT
900MHz SiGe, High IP3,
o Wide Frequency Range: 800MHz to 1000MHz
o High Output IP3 and Adjustable
o Low Noise Figure: 1.3dB at 900MHz
o 13dB Attenuation Step (MAX2642)
o On-Chip Output Matching
o Low-Power Shutdown Mode
o +2.7V to +5.5V Single-Supply Operation
o Ultra-Small SC70-6 Package
MAX2642EXT-T
MAX2643EXT-T
Low-Noise Amplifiers
TOP VIEW
+17dBm at 5.3mA
+7dBm at 2.8mA
PART
BIAS
RFIN
GND
TEMP. RANGE
-40°C to +85°C
-40°C to +85°C
1
2
3
Ordering Information
MAX2642
MAX2643
SC70-6
Pin Configuration
PIN-
PACKAGE
6 SC70-6
6 SC70-6
6
5
4
RFOUT
GND
V
CC
Features
MARK
TOP
AAC
AAD
1

Related parts for MAX2643EXT+T

MAX2643EXT+T Summary of contents

Page 1

... RFIN RF INPUT C1 3.3pF GND ________________________________________________________________ Maxim Integrated Products For free samples and the latest literature, visit www.maxim-ic.com or phone 1-800-998-8800. For small orders, phone 1-800-835-8769. 900MHz SiGe, High IP3, Low-Noise Amplifiers o Wide Frequency Range: 800MHz to 1000MHz o High Output IP3 and Adjustable +17dBm at 5 ...

Page 2

SiGe, High IP3, Low-Noise Amplifiers ABSOLUTE MAXIMUM RATINGS V to GND ..............................................................-0.3V to +6V CC RFOUT to GND...........................................-0. RFIN to GND ..................................................................0 to 0.9V RFIN Power (50Ω source) ................................................+5dBm BIAS to GND ................................................................0 to +0.3V Operating Temperature ...

Page 3

AC ELECTRICAL CHARACTERISTICS (MAX2642/MAX2643 EV kits -30dBm, f RFIN R = 510Ω, unless otherwise noted.) (Note 12) BIAS PARAMETER Operating Frequency Range (Note 13) Gain (Note 14) T Gain Variation Over Temperature T Attenuation Step MAX2642 only R ...

Page 4

SiGe, High IP3, Low-Noise Amplifiers (MAX2642/MAX2643 EV kits +3.0V 510Ω, high-gain mode (low-gain mode is applicable only to the MAX2642), T INPUT THIRD-ORDER INTERCEPT vs. R (HIGH GAIN) BIAS ...

Page 5

EV kits +3.0V 510Ω, high-gain mode (low-gain mode is applicable only to the MAX2642), T MAX2642 ATTENUATION STEP vs. FREQUENCY 14.0 MATCHED AT 900MHz 13.8 13.6 13.4 13.2 13.0 12.8 12.6 800 820 840 860 ...

Page 6

SiGe, High IP3, Low-Noise Amplifiers PIN NAME Resistor Bias Control. Connect a resistor BIAS current (see Applications Information). The current through this pin is approximately 50mV divided by R BIAS 2, 5 GND Ground. For optimum performance, ...

Page 7

Table 1. MAX2642/MAX2643 Typical Scattering Parameters (R = 510Ω, high-gain mode +3.0V, T BIAS CC FREQ S11 PHASE S11 MAG (MHz) (DEGREES) 500 0.832641 -69.5831 600 0.825168 -83.7622 700 0.785389 -97.3356 800 0.73798 -108.682 820 0.728099 -110.578 840 ...

Page 8

SiGe, High IP3, Low-Noise Amplifiers Table 2. MAX2642/MAX2643 Typical Scattering Parameters (R = 806Ω, high-gain mode +3.0V, T BIAS CC FREQ S11 PHASE S11 MAG (MHz) (DEGREES) 500 0.865705 -67.5629 600 0.853946 -80.7084 700 0.820187 -94.1329 800 ...

Page 9

Table 3. MAX2642/MAX2643 Typical Scattering Parameters (R = 1.1kΩ, high-gain mode +3.0V, T BIAS CC FREQ S11 PHASE S11 MAG (MHz) (DEGREES) 500 0.878512 -66.0475 600 0.86813 -79.0081 700 0.834311 -91.9431 800 0.793611 -102.384 820 0.783644 -104.098 840 ...

Page 10

SiGe, High IP3, Low-Noise Amplifiers Table 4. MAX2642 Typical Scattering Parameters (R = 510Ω, low-gain mode +3.0V, T BIAS CC FREQ S11 PHASE S11 MAG (MHz) (DEGREES) 500 0.757279 -68.0641 600 0.75734 -84.3042 700 0.696969 -98.422 800 ...

Page 11

Table 5. MAX2642 Typical Scattering Parameters (R = 806Ω, low-gain mode +3.0V, T BIAS CC FREQ S11 PHASE S11 MAG (MHz) (DEGREES) 500 0.800327 -67.1945 600 0.793203 -81.9096 700 0.736656 -95.21 800 0.676741 -103.586 820 0.666567 -104.763 840 ...

Page 12

SiGe, High IP3, Low-Noise Amplifiers Table 6. MAX2642 Typical Scattering Parameters (R = 1.1Ω, low-gain mode +3.0V, T BIAS CC FREQ S11 PHASE S11 MAG (MHz) (DEGREES) 500 0.822139 -66.5029 600 0.808058 -80.314 700 0.755255 -93.0574 800 ...

Page 13

Table 7. MAX2642/MAX2643 Typical Noise Parameters (R = 510Ω, high-gain mode +3.0V, T BIAS CC FREQUENCY NF (MHz) (dB) 800 1.011 850 1.023 875 1.030 900 1.037 925 1.045 950 1.053 1000 1.069 Table 8. MAX2642/MAX2643 Typical Noise ...

Page 14

SiGe, High IP3, Low-Noise Amplifiers BIAS MAX2642 R R BIAS BIAS (A) Figure 1. MAX2642 Recommended Shutdown Configurations 14 ______________________________________________________________________________________ Table 10. Gain Selection and Shutdown Modes BIAS PART MAX2642 MAX2643 MAX2642 TRANSISTOR COUNT: 158 (B) CONTROL CONTROL VOLTAGE ...

Page 15

SiGe, High IP3, Low-Noise Amplifiers Package Information 15 ...

Page 16

SiGe, High IP3, Low-Noise Amplifiers 16 ______________________________________________________________________________________ NOTES ...

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