MJE3055TG ON Semiconductor, MJE3055TG Datasheet - Page 4

• Manufacturer Part Number: MJE3055TG
• Description: TRANS PWR NPN 10A 60V TO220AB
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of MJE3055TG

• Transistor Type: NPN
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 8V @ 3.3A, 10A
• Current - Collector Cutoff (max): 700µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 4A, 4V
• Power - Max: 75W
• Frequency - Transition: 2MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 10 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 10 A
• Dc Collector/base Gain Hfe Min: 20
• Maximum Operating Frequency: 2 MHz
• Minimum Operating Temperature: - 55 C
• Current, Collector: 10 A
• Current, Gain: 5
• Frequency: 2 MHz
• Package Type: TO-220AB
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 1.67 °C/W
• Voltage, Breakdown, Collector To Emitter: 60 V
• Voltage, Collector To Base: 70 V
• Voltage, Collector To Emitter: 60 V
• Voltage, Collector To Emitter, Saturation: 8 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJE3055TGOS

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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N. American Technical Support: 800−282−9855 Toll Free
Europe, Middle East and Africa Technical Support:
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PACKAGE DIMENSIONS
USA/Canada
Phone: [phone]
Phone: 81−3−5773−3850
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http://onsemi.com
CASE 221A−09
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ISSUE AF
TO−220
−T−
4
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
Y14.5M, 1982.
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
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Z
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
MIN
---
INCHES
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.055
0.255
0.050
0.080
0.110
MAX
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14.48
12.70
MILLIMETERS
MIN
9.66
4.07
0.64
3.61
2.42
2.80
0.36
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
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MAX
15.75
10.28
14.27
4.82
0.88
4.09
2.66
3.93
0.64
1.52
5.33
3.04
2.79
1.39
6.47
1.27
2.04
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MJE2955T/D