BUL45G ON Semiconductor, BUL45G Datasheet

BUL45G

Manufacturer Part Number

BUL45G

Description

TRANS NPN 5A 400V 75W TO220AB

Manufacturer

ON Semiconductor

Series

SWITCHMODE™r

Datasheet

1.BUL45G.pdf (8 pages)

Specifications of BUL45G

Transistor Type

NPN

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

400V

Vce Saturation (max) @ Ib, Ic

400mV @ 400mA, 2A

Current - Collector Cutoff (max)

100µA

Dc Current Gain (hfe) (min) @ Ic, Vce

14 @ 300mA, 5V

Power - Max

75W

Frequency - Transition

12MHz

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Transistor Polarity

NPN

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

400

Emitter- Base Voltage Vebo

9 V

Maximum Dc Collector Current

5 A

Power Dissipation

75 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

5 A

Dc Collector/base Gain Hfe Min

Maximum Operating Frequency

12 MHz

Minimum Operating Temperature

- 65 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BUL45GOS

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BUL45G

NPN Silicon Power

Transistor

High Voltage SWITCHMODEt Series

Switchmode Power supplies up to 50 Watts.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

April, 2010 − Rev. 8

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Sustaining Voltage

Collector−Base Breakdown Voltage

Emitter−Base Voltage

Collector Current

Base Current

Total Device Dissipation @ T

Derate above 25°C

Operating and Storage Temperature

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Designed for use in electronic ballast (light ballast) and in

Improved Efficiency Due to:

Full Characterization at 125°C

Tight Parametric Distributions Consistent Lot−to−Lot

These Devices are Pb−Free and are RoHS Compliant*

♦

Low Base Drive Requirements (High and Flat DC Current Gain h

Low Power Losses (On−State and Switching Operations)

Fast Switching: t

@ I

= 2.0 A, I

Characteristics

Rating

− Continuous

− Peak (Note 1)

= I

= 100 ns (typ) and t

= 25_C

= 0.4 A

Symbol

CEO

EBO

, T

CES

qJC

qJA

stg

= 3.2 ms (typ)

−65 to 150

Value

Max

1.65

62.5

400

700

9.0

5.0

2.0

0.6

W/_C

_C/W

Unit

Vdc

Adc

)

BUL45G

Device

5.0 AMPERES, 700 VOLTS,

POWER TRANSISTOR

BUL45

ORDERING INFORMATION

35 AND 75 WATTS

MARKING DIAGRAM

http://onsemi.com

(Pb−Free)

Package

TO−220

= Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

AY WW

BUL45G

CASE 221A−09

Publication Order Number:

TO−220AB

STYLE 1

50 Units / Rail

Shipping

BUL45/D

Related parts for BUL45G

BUL45G Summary of contents

Page 1

... Device BUL45G 1 http://onsemi.com POWER TRANSISTOR 5.0 AMPERES, 700 VOLTS, 35 AND 75 WATTS TO−220AB CASE 221A−09 STYLE MARKING DIAGRAM BUL45G AY WW BUL45 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Package Shipping TO−220 50 Units / Rail (Pb− ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (I = 100 mA mH) C Collector Cutoff Current (V = Rated V CE CEO Collector Cutoff Current (V = Rated V CE CES Emitter Cutoff Current (V = ...

Page 3

TYPICAL STATIC CHARACTERISTICS 100 T = 25° 125° 20° 0.01 0.10 1. COLLECTOR CURRENT (AMPS) C Figure 1. DC Current Gain @ 1 Volt 2.0 1.5 1.5 1 ...

Page 4

TYPICAL SWITCHING CHARACTERISTICS 1200 B(off 25° 300 125°C J 1000 800 600 400 200 0 0 ...

Page 5

TYPICAL SWITCHING CHARACTERISTICS 150 T = 25°C J 140 T = 125°C J 130 I C 120 110 100 FORCED GAIN FE ...

Page 6

dyn dyn 90 TIME Figure 18. Dynamic Saturation Voltage Measurements ...

Page 7

... The BUL45 Bipolar Power Transistors were specially designed for use in electronic lamp ballasts. A circuit designed by ON Semiconductor applications was built 385 V C1 D10 FUSE CTN 0 LINE 220 BUL45 Transistor D1 = 1N4007 Rectifier D2 = 1N5761 Rectifier MUR150 MUR105 D10 = 1N400 CTN = 25° RM10 core 400, B51 (LCC) 75 turns, wire ∅ ...

Page 8

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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