TIP3055G ON Semiconductor, TIP3055G Datasheet - Page 3

TRANS NPN 15A 60V TO-218

TIP3055G

Manufacturer Part Number
TIP3055G
Description
TRANS NPN 15A 60V TO-218
Manufacturer
ON Semiconductor
Datasheet

Specifications of TIP3055G

Transistor Type
NPN
Current - Collector (ic) (max)
15A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
3V @ 3.3A, 10A
Current - Collector Cutoff (max)
700µA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 4A, 4V
Power - Max
90W
Frequency - Transition
2.5MHz
Mounting Type
Through Hole
Package / Case
SOT-93, TO-218 (Straight Leads)
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
60V
Collector-base Voltage(max)
100V
Emitter-base Voltage (max)
7V
Collector Current (dc) (max)
15A
Dc Current Gain (min)
20
Power Dissipation
90W
Frequency (max)
2.5MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
SOT-93
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
15 A
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
1.5 A
Dc Collector/base Gain Hfe Min
20
Maximum Operating Frequency
2.5 MHz
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TIP3055GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TIP3055G
Manufacturer:
ON
Quantity:
30 000
Part Number:
TIP3055G
Manufacturer:
ST
0
100
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
50
30
20
10
1.0
Figure 2. Maximum Rated Forward Bias
2.0
V
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT @ T
T
CE
J
= 150°C
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
4.0
Safe Operating Area
6.0
C
dc
10
= 25°C
1000
100
10
0.1
20
1.0 ms
TIP3055 (NPN), TIP2955 (PNP)
0.2
10 ms
40
0.3
300 ms
Figure 1. DC Current Gain
I
C
60
http://onsemi.com
, COLLECTOR CURRENT (AMP)
0.5 0.7
3
1.0
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated for temperature.
There are two limitations on the power handling ability of
The data of Figure 2 is based on T
V
T
J
CE
= 25°C
2.0
= 4.0 V
3.0
5.0
TIP3055
TIP2955
7.0 10
C
= 25_C; T
C
J(pk)
− V
CE
is

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