TIP33CG ON Semiconductor, TIP33CG Datasheet - Page 2

• Manufacturer Part Number: TIP33CG
• Description: TRANS NPN 10A 100V HI PWR TO-218
• Manufacturer: ON Semiconductor

Specifications of TIP33CG

• Transistor Type: NPN
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 4V @ 2.5A, 10A
• Current - Collector Cutoff (max): 700µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 3A, 4V
• Power - Max: 80W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: SOT-93, TO-218 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 10 A
• Power Dissipation: 80 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 10 A
• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Frequency: 3 MHz
• Minimum Operating Temperature: - 65 C
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 10A
• Dc Current Gain (min): 40
• Frequency (max): 3MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: SOT-93
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TIP33CGOS

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
DYNAMIC CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
Collector−Emitter Cutoff Current
Collector−Emitter Cutoff Current
Emitter−Base Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter On Voltage
Small−Signal Current Gain
Current−Gain — Bandwidth Product
(I
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
C
C
C
C
C
C
C
C
C
CE
CE
CE
EB
= 30 mA, I
= 1.0 A, V
= 3.0 A, V
= 3.0 A, I
= 10 A, I
= 3.0 A, V
= 10 A, V
= 0.5 A, V
= 0.5 A, V
= 5.0 V, I
= 30 V, I
= 60 V, I
= Rated V
B
B
CE
CE
CE
CE
CE
CE
B
B
B
= 2.5 A)
C
= 0.3 A)
= 0)
= 0)
= 0)
CEO
= 4.0 V)
= 0)
= 4.0 V)
= 4.0 V)
= 4.0 V)
= 10 V, f = 1.0 kHz)
= 10 V, f = 1.0 MHz)
, V
EB
= 0)
Characteristic
(T
C
= 25_C unless otherwise noted)
TIP33A, TIP33C
http://onsemi.com
2
TIP33C
TIP33C
TIP33A
TIP33A
V
Symbol
V
V
CEO(sus)
CE(sat)
I
I
I
BE(on)
CEO
h
CES
EBO
h
f
FE
T
fe
Min
100
3.0
60
40
20
20
−
−
−
−
−
−
−
Max
100
0.7
0.4
1.0
1.0
4.0
1.6
3.0
−
−
−
−
−
MHz
Unit
Vdc
Vdc
Vdc
mA
mA
mA
−
−